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K7M163635B-QC65

Description
512Kx36 & 1Mx18 Pipelined NtRAM
Categorystorage    storage   
File Size455KB,24 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K7M163635B-QC65 Overview

512Kx36 & 1Mx18 Pipelined NtRAM

K7M163635B-QC65 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
package instructionQFP, QFP100,.63X.87
Reach Compliance Codeunknown
Maximum access time6.5 ns
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-PQFP-G100
memory density18874368 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level1
Number of terminals100
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.63X.87
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,3.3 V
Certification statusNot Qualified
Maximum standby current0.13 A
Minimum standby current3.14 V
Maximum slew rate0.3 mA
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.635 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
K7N163631B
K7N161831B
Document Title
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
512Kx36 & 1Mx18-Bit Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial document.
1. Update the current spec(Icc, I
SB
)
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
1. Remove the 1.8V Vdd voltage level
1. Remove the -20 and -13 speed bin
Draft Date
Mar. 23, 2004
May. 13, 2004
Sep. 21. 2004
Remark
Advance
Preliminary
Preliminary
0.3
0.4
Oct. 18, 2004
Jan. 04, 2005
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Jan. 2005
Rev 0.4

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Description 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM
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