K7N163631B
K7N161831B
Document Title
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
512Kx36 & 1Mx18-Bit Pipelined NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
History
1. Initial document.
1. Update the current spec(Icc, I
SB
)
1. Change the ISB,ISB1,ISB2
- ISB ; from 120mA to 170mA
- ISB1 ; from 80mA to 150mA
- ISB2 ; from 80mA to 130mA
1. Remove the 1.8V Vdd voltage level
1. Remove the -20 and -13 speed bin
Draft Date
Mar. 23, 2004
May. 13, 2004
Sep. 21. 2004
Remark
Advance
Preliminary
Preliminary
0.3
0.4
Oct. 18, 2004
Jan. 04, 2005
Preliminary
Preliminary
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Jan. 2005
Rev 0.4
K7N163631B
K7N161831B
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
16Mb NtRAM(Flow Through / Pipelined) Ordering Informa
tion
Org.
Part Number
Mode
VDD
Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz)
6.5ns
250/167MHz
6.5ns
250/167MHz
PKG
Temp
K7M161835B-QC(I)65
1Mx18
K7N161831B-Q(F)C(I)25/16
K7M163635B-QC(I)65
512Kx36
K7N163631B-Q(F)C(I)25/16
FlowThrough
Pipelined
FlowThrough
Pipelined
3.3/2.5
3.3/2.5
3.3/2.5
3.3/2.5
C
; Commercial
Q : 100TQFP Temp.Range
F : 165FBGA
I
; Industrial
Temp.Range
-2-
Jan. 2005
Rev 0.4
K7N163631B
K7N161831B
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
512Kx36 & 1Mx18-Bit Pipelined NtRAM
TM
FEATURES
• V
DD
= 2.5 or 3.3V +/- 5% Power Supply.
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data-
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• 100-TQFP-1420A
• 165FBGA(11x15 ball aray) with body size of 13mmx15mm.
• Operating in commeical and industrial temperature range.
GENERAL DESCRIPTION
The K7N163631B and K7N161831B are 18,874,368-bits Syn-
chronous Static SRAMs.
The NtRAM
TM
, or No Turnaround Random Access Memory uti-
lizes all the bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, pipelined SRAM output data is temporarily
stored by an edge triggered output register and then released
to the output buffers at the next rising edge of clock.
The K7N163631B and K7N161803B are implemented with
SAMSUNG′s high performance CMOS technology and is avail-
able in 100pin TQFP and 165FBGA packages. Multiple power
and ground pins minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
tCYC
tCD
tOE
-25
4.0
2.6
2.6
-16
6.0
3.5
3.5
Unit
ns
ns
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:18]or
A [0:19]
ADDRESS
REGISTER
A
2
~A
18
or A
2
~A
19
A
0
~A
1
BURST
ADDRESS
COUNTER
A′
0
~A′
1
512Kx36, 1Mx18
MEMORY
ARRAY
CLK
CKE
K
WRITE
ADDRESS
REGISTER
WRITE
ADDRESS
REGISTER
CONTROL
LOGIC
K
DATA-IN
REGISTER
DATA-IN
REGISTER
K
CS
1
CS
2
CS
2
ADV
WE
BW
x
(x=a,b,c,d or a,b)
OE
ZZ
DQa
0
~ DQd
7
or DQa
0
~ DQb
8
DQPa ~ DQPd
36 or 18
CONTROL
REGISTER
CONTROL
LOGIC
K
OUTPUT
REGISTER
BUFFER
NtRAM
TM
and No Turnaround Random Access Memory are trademarks of Samsung.
-3-
Jan. 2005
Rev 0.4
K7N163631B
K7N161831B
PIN CONFIGURATION
(TOP VIEW)
BWd
BWb
BWa
BWc
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
CKE
CS
2
ADV
CLK
CS
1
CS
2
V
DD
V
SS
WE
A
18
A
6
A
17
83
OE
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
10
A
12
A
13
A
14
A
15
LBO
N.C.
N.C.
V
SS
N.C.
N.C.
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,84,99,100
85
88
89
87
98
97
92
93,94,95,96
86
64
31
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
or NC
V
DDQ
V
SSQ
PIN NAME
TQFP PIN NO.
Power Supply(+3.3V) 14,15,16,41,65,66,91
17,40,67,90
Ground
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
38,39,42,43
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b,c,d)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
A
11
Output Power Supply 4,11,20,27,54,61,70,77
(3.3V or 2.5V)
Output Ground
5,10,21,26,55,60,71,76
Note :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
A
16
50
NC/DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
V
DD
V
DD
V
DD
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
NC/DQPd
84
81
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7N163631B(512Kx36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
V
DD
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa/NC
Jan. 2005
Rev 0.4
K7N163631B
K7N161831B
PIN CONFIGURATION
(TOP VIEW)
BWb
BWa
Preliminary
512Kx36 & 1Mx18 Pipelined NtRAM
TM
CKE
CS
2
N.C.
N.C.
CS
2
ADV
CLK
CS
1
V
DD
V
SS
WE
A
19
A
6
A
18
83
OE
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
12
A
13
A
14
A
15
A
16
LBO
N.C.
N.C.
V
SS
N.C.
N.C.
PIN NAME
SYMBOL
A
0
- A
19
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,84,99,100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
TQFP PIN NO.
Power Supply(+3.3V) 14,15,16,41,65,66,91
Ground
17,40,67,90
No Connect
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
A
11
DQa
0
~a
8
DQb
0
~b
8
Data Inputs/Outputs
Data Inputs/Outputs
V
DDQ
V
SSQ
Output Power Supply 4,11,20,27,54,61,70,77
(3.3V or 2.5V)
Output Ground
5,10,21,26,55,60,71,76
N
OTE
:
A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-5-
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
DD
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7N161831B(1Mx18)
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
DD
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
Jan. 2005
Rev 0.4
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