C-BAND MEDIUM POWER GaAs MESFET NE850R599A
FEATURES
• HIGH OUTPUT POWER:
0.5 W
• HIGH LINEAR GAIN:
9.5 dB
• HIGH EFFICIENCY (PAE):
38%
• SUPERIOR INTERMODULATION DISTORTION
• INDUSTRY STANDARD PACKAGING
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 99
5.2±0.3
1.0±0.1
4.0 MIN BOTH LEADS
Gate
φ2.2±0.2
4.3±0.2
4.0±0.1
Source
DESCRIPTION
The NE850R599A is a medium power GaAs MESFET de-
signed for up to a 1/2W output stage or as a driver for higher
power devices. The device has no internal matching and can
be used at frequencies from UHF to 8.5 GH
Z
. Equivalent
performance in a chip package can be obtained by using only
1 cell of the NE8500100 chip. The chips used in this series
offer superior reliability and consistent performance for which
NEC microwave semiconductors are known.
Drain
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
+.06
0.1 -.02
0.2 MAX
1.7±0.15
5.0 MAX
6.0±0.2
1.2
RECOMMENDED OPERATING LIMITS
SYMBOLS
V
DS
T
CH
G
COMP
R
G
PARAMETERS
Drain to Source Voltage
Channel Temperature
Gain Compression
Gate Resistance
UNITS MIN
V
°C
dB
KΩ
9
TYP MAX
10
130
3.0
1
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
Power Out at Fixed Input Power
Power Added Efficiency
Drain Source Current
Gate to Source Current
Linear Gain
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance (channel to case)
= 25°C)
NE850R599A
99
UNITS
dBm
%
A
mA
dB
mA
V
mS
°C/W
220
-3.0
150
60
-1.6
9.5
430
-1.0
MIN
25.5
TYP
26.5
38
140
1.6
P
IN
= 7 dBm
2
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 2 mA
V
DS
= 2.5 V; I
DS
= I
DSS
MAX
TEST CONDITIONS
P
IN
= 18.5 dBm
1
V
DS
= 10 V; I
DSQ
= 100 mA
f = 7.2 GHz; R
G
= 1 KΩ
Functional
Characteristics
P
OUT
η
ADD
I
DS
I
GS
G
L
Electrical
Characteristic
s
I
DSS
V
P
g
m
R
TH
California Eastern Laboratories
NE850R599A
ABSOLUTE MAXIMUM RATINGS
1
(T
C
= 25
°C
unless otherwise noted)
SYMBOLS
V
DSX
V
GDX
V
GSX
I
DS
I
GS
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
mA
mA
W
°C
°C
RATINGS
15
-18
-12
I
DSS
3.0
3.0
175
-65 to +175
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
OUTPUT POWER vs. INPUT POWER
V
D
= 10 V, f = 7.2 GHz
I
D
= 100 mA set
Rg = 1KΩ
Output Power, P
OUT
(dBm)
30
P
OUT
25
I
D
(mA)
I
D
20
140
120
100
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
15
10
15
20
Input Power, P
IN
(dBm)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
01/14/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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