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NE25139U72

Description
GENERAL PURPOSE DUAL-GATE GaAS MESFET
File Size54KB，7 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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NE25139U72 Overview

GENERAL PURPOSE DUAL-GATE GaAS MESFET

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GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW C
RSS
:
0.02 pF (TYP)
• HIGH GPS:
20 dB (TYP) AT 900 MHz
• LOW NF:
1.1 dB TYP AT 900 MHz
• L
G1
= 1.0
µm,
L
G2
= 1.5
µm,
W
G
= 400
µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
G
PS
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
10
I
D
= 10 mA
f = 900 MHz
5
NF
0
0
5
10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
µA
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
µA
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
µA
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
18
0.5
25
1.0
0.02
16
13
5
-3.5
-3.5
10
10
35
1.5
0.03
20
40
MIN
NE25139
39
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB
)

NE25139U72 Related Products

NE25139U72 NE25139 NE25139U73 NE25139T1U74 NE25139T1U73 NE25139T1U72 NE25139T1U71 NE25139-T1 NE25139U74 NE25139U71
Description GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET

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