GENERAL PURPOSE
DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN
UHF TUNER
• LOW C
RSS
:
0.02 pF (TYP)
• HIGH GPS:
20 dB (TYP) AT 900 MHz
• LOW NF:
1.1 dB TYP AT 900 MHz
• L
G1
= 1.0
µm,
L
G2
= 1.5
µm,
W
G
= 400
µm
• ION IMPLANTATION
• AVAILABLE IN TAPE & REEL OR BULK
Power Gain, G
PS
(dB)
20
NE25139
POWER GAIN AND NOISE FIGURE vs.
DRAIN TO SOURCE VOLTAGE
G
PS
10
V
G2S
= 1 V
V
G2S
= 0.5 V
V
G2S
= 2 V
10
I
D
= 10 mA
f = 900 MHz
5
NF
0
0
5
10
0
DESCRIPTION
The NE251 is a dual gate GaAs FET designed to provide
flexibility in its application as a mixer, AGC amplifier, or low
noise amplifier. As an example, by shorting the second gate
to the source, higher gain can be realized than with single gate
MESFETs. This device is available in a mini-mold (surface
mount) package.
Drain to Source Voltage, V
DS
(V)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOL
NF
G
PS
BV
DSX
I
DSS
V
G1S (OFF)
V
G2S (OFF)
I
G1SS
I
G2SS
|Y
FS
|
C
ISS
C
RSS
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Power Gain at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 900 MHz
Drain to Source Breakdown Voltage at V
G1S
= -4 V,
V
G2S
= 0, I
D
= 10
µA
Saturated Drain Current at V
DS
= 5 V, V
G2S
= 0 V, V
G1S
= 0 V
Gate 1 to Source Cutoff Voltage at V
DS
= 5 V,
V
G2S
= 0 V, I
D
= 100
µA
Gate 2 to Source Cutoff Voltage at V
DS
= 5 V,
V
G1S
= 0 V, I
D
= 100
µA
Gate 1 Reverse Current at V
DS
= 0, V
G1S
= -4V, V
G2S
= 0
Gate 2 Reverse Current at V
DS
= 0, V
G2S
= -4V, V
G1S
= 0
Forward Transfer Admittance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1.0 kHz
Input Capacitance at V
DS
= 5 V, V
G2S
= 1 V, I
D
= 10 mA,
f = 1 MHz
Reverse Transfer Capacitance at V
DS
= 5 V, V
G2S
= 1 V,
I
D
= 10 mA, f = 1 MHz
UNITS
dB
dB
V
mA
V
V
µA
µA
mS
pF
pF
18
0.5
25
1.0
0.02
16
13
5
-3.5
-3.5
10
10
35
1.5
0.03
20
40
MIN
NE25139
39
TYP
1.1
20
MAX
2.5
California Eastern Laboratories
Noise Figure, NF (dB
)
NE25139
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
DS
V
G1S
V
G2S
I
D
P
T
T
CH
T
STG
PARAMETERS
Drain to Source Voltage
Gate 1 to Source Voltage
Gate 2 to Source Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
13
-4.5
-4.5
I
DSS
200
125
-55 to +125
TYPICAL NOISE PARAMETERS
(T
A
= 25°C)
(V
DS
= 5 V, V
G2S
= 0 V, I
DS
= 10 mA)
FREQ.
(GHz)
0.5
0.9
1.5
2.0
3.0
4.0
NF
OPT
(dB)
0.9
1.2
1.5
1.9
2.5
3.3
G
A
(dB)
18.5
16.0
14.6
12.5
11.0
9.5
0.9
0.82
0.71
0.55
0.34
0.25
Γ
OPT
MAG
ANG
18
28
45
75
116
154
Rn/50
1.9
1.2
0.9
0.67
0.5
0.4
Note:
1. Operation in excess of anyone of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
TOTAL POWER DISSIPATION VS.
AMBIENT TEMPERATURE
250
DRAIN CURRENT vs.
GATE 1 TO SOURCE VOLTAGE
30
V
DS
= 5V
Total Power Dissipation, P
T
(mW)
FREE AIR
Drain Current, I
D
(mA)
200
V
G2S
= 1.0V
20
150
0.5 V
10
100
0V
50
-0.5 V
0
0
25
50
75
100
125
0
-2.0
-1.0
0
+1.0
Ambient Temperature, T
A
(°C)
FORWARD TRANSFER ADMITTANCE vs.
GATE 1 TO SOURCE VOLTAGE
Gate 1 to Source Voltage, V
G1S
(V)
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
Forward Transfer Admittance, |Y
FS
| (mS)
Forward Transfer Admittance, |Y
FS
| (mS)
30
V
DS
= 5V
f = 1kHz
30
V
DS
= 5 V
f = 1 kHz
V
G2S
= 1.0 V
20
20
V
G2S
= 1.0
10
0.5 V
-0.5 V
0
-2.0
-1.0
0
+1.0
0V
10
V
G2S
= 0.5 V
0
0
10
20
30
Gate 1 to Source Voltage, V
G1S
(V)
Drain Current, I
D
(mA)
NE25139
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
INPUT CAPACITANCE vs.
GATE 2 TO SOURCE VOLTAGE
2.0
V
DS
= 5 V
f = 1kHz
POWER GAIN AND NOISE FIGURE vs.
GATE 2 TO SOURCE VOLTAGE
30
V
DS
= 5 V
V
G2S
= 1 V
I
D
= 10 mA
f = 900 MHz
1
10
Input Capacitance, C
ISS
(pF)
15
G
PS
V
G2S
= 1 V at I
D
= 10 mA
1
0
5
-15
NF
-30
1.0
V
G2S
= 1 V at I
D
= 5 mA
1
-45
-1.0
0
+1.0
0
-2.0
-1.0
0
+1.0
+2.0
-3.0
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
Gate 2 to Source Voltage, V
G2S
(V)
Note:
1. Initial bias conditions. V
G1S
set to obtain
specified drain current.
POWER GAIN AND NOISE FIGURE vs.
DRAIN CURRENT
25
V
DS
= 5 V
V
G2S
= 1 V
f = 900 MHz
20
10
15
G
PS
5
10
5
NF
0
0
5
10
0
Drain Current, I
D
(mA)
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
Noise Figure, NF (dB)
Power Gain, G
P
(dB)
NE25139
NONLINEAR MODEL
UNITS FOR MODEL PARAMETERS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
seconds
farads
henries
ohms
volts
amps
FET NONLINEAR MODEL PARAMETERS
(1)
Parameters
UGW
NGF
IS
N
RG
RD
RS
RIS
RID
TAU
CDSO
C11O
C11TH
VINFL
DELTGS
DELTDS
LAMBDA
C11DELT
C12O
C12SAT
CGDSAT
KBK
VBR
NBR
(1) Libra EEFET3 Model
FET1
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
\0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
FET2
100e-6
4
8.78e-10
1.33
0
0
0
0
0
5.17e-12
1.19e-13
6.1e-13
1.6e-13
-1.1
1.82
0.682
0.036
0
0
6.81e-14
6.81e-14
0.03
6.5
2
Parameters
IDSOC
RDB
CBS
GDBM
KDB
VDSM
GMMAXAC
GAMMAAC
KAPAAC
PEFFAC
VTOAC
VTSOAC
VDELTAC
GMMAX
GAMMA
KAPA
PEFF
VTO
VTSO
VDELT
VCH
VSAT
VGO
VDSO
FET1
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0475
0.0107
0.0001
44.9
-1.584
-100
0.062
0.0554
0.006
0.046
1.636
-1.57
-100
0.135
1
1.119
-0.654
3
FET2
0.07
1.0e9
0.16e-12
0.005
11.1
7.1e-11
0.0875
0.0051
0.0052
44.9
-1.545
-100
0.062
0.0304
0.005
0.0005
1.636
-1.5
-10
0.1
1
1.119
-0.0035
10
NE25139
NONLINEAR MODEL
SCHEMATIC
PORT
Pdrain
port = 2
CAP
Cg2d
C = 0.15
RES
Rd
R = 4.58
PORT
P1
port = 3
IND
Lg2
L = 0.40
RES
Rg2
R = 1.44
EEFET3
FET2
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
CAP
C12
C = 0.32
CAP
Cg1d
C = 5.64e-03
RES
R12
R = 1.13
RES
RDS
R = 711
PORT
Pgate1
port = 1
IND
Lg1
L = 1.65
RES
Rg1
R = 1.52
EEFET3
FET1
UGW=0
N=0
FILE = NE720_b.mdif
MODE = nonlinear
CAP
CDS
C = 7.60e-02
CAP
Cg1s
C = 0.41
RES
Rs
R = 5.79
CAP
Cg2s
C = 0.39
IND
Ls
L = 1.78
UNITS
Parameter
capacitance
inductance
resistance
Units
picofarads
nanohenries
ohms
PORT
P4
port = 4
NOTES:
1. This UGW value scales the model parameters on page 1.
2. This N value is the number of gate fingers and scales the
model parameters on page 1.
MODEL RANGE
Frequency: 0.1 to 4 GHz
Bias:
V
DS
= 5 V, Vg
1
s= -0.785 V, Vg
2
s= 0 V, I
D
= 10 mA
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