March 1996
NDP7050 / NDB7050
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly suited
for low voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery powered
circuits where fast switching, low in-line power loss, and
resistance to transients are needed.
Features
75A, 50V. R
DS(ON)
= 0.013
Ω
@ V
GS
=10V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both through
hole and surface mount applications.
_______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
T
C
= 25°C unless otherwise noted
NDP7050
NDB7050
Units
V
DSS
V
DGR
V
GSS
I
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50 µs)
Drain Current
- Continuous
- Pulsed
50
50
± 20
± 40
75
225
150
1
-65 to 175
275
V
V
V
A
P
D
Maximum Power Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
W
W/
°
C
°C
°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7050.SAM Rev. D
Electrical Characteristics
(T
Symbol
Parameter
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
W
DSS
I
AR
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
I
D(on)
g
FS
Single Pulse Drain-Source Avalanche
Energy
Maximum Drain-Source Avalanche Current
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
DD
= 25 V, I
D
= 75 A
550
75
mJ
A
V
OFF CHARACTERISTICS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 50 V, V
GS
= 0 V
T
J
= 125°C
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
GS
= 10 V, I
D
= 40 A
T
J
= 125°C
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 37.5 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
50
250
1
100
-100
µA
mA
nA
nA
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
ON CHARACTERISTICS
(Note 1)
Gate Threshold Voltage
2
1.4
2.8
2.1
0.01
0.015
4
3.6
0.013
0.023
V
Static Drain-Source On-Resistance
Ω
A
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
75
15
39
2960
1130
380
3600
1600
800
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
SWITCHING CHARACTERISTICS
(Note 1)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 30 V, I
D
= 75 A,
V
GS
= 10 V, R
GEN
= 5
Ω
17
128
54
90
30
400
80
200
115
nS
nS
nS
nS
nC
nC
nC
V
DS
= 48 V,
I
D
= 75 A, V
GS
= 10 V
100
14.5
51
NDP7050.SAM Rev. D
Electrical Characteristics
(T
Symbol
Parameter
C
= 25°C unless otherwise noted)
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
I
rr
Maximum Continuos Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
V
GS
= 0 V, I
S
= 37.5 A
(
Note 1)
T
J
= 125°C
V
GS
= 0 V, I
F
= 75 A, dI
F
/dt = 100 A/µs
2
0.9
0.84
80
4.8
75
225
1.3
1.2
150
10
1
62.5
A
A
V
ns
A
°
C/W
°
C/W
THERMAL CHARACTERISTICS
R
θ
JC
R
θ
JA
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP7050.SAM Rev. D
Typical Electrical Characteristics
120
2 .5
V
GS
= 2 0 V
I
D
, DRAIN-SOURCE CURRENT (A)
100
1 0 8 .0
7 .0
6 .5
R
DS(on)
, NORMALIZED
V
GS
= 5 .0 V
DRAIN-SOURCE ON-RESISTANCE
2
5.5
6 .0
6.5
7.0
8.0
80
6 .0
60
1 .5
5 .5
40
5 .0
20
1
4 .5
4 .0
0
0
1
2
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
4
5
10
12
20
0 .5
0
20
40
60
80
I
D
, DRA IN CURRENT (A)
100
120
Figure 1. On-Region Characteristics
.
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
1.8
1.6
1 .8
I
D
= 40A
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
1 .6
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 10V
R
DS(on)
, NORMALIZED
TJ = 125°C
R
DS(ON)
, NORMALIZED
1.4
1.2
1
0.8
0.6
0.4
-5 0
1 .4
1 .2
25°C
1
0 .8
-55°C
-25
0
25
50
75
100
125
T
J
, JUNCTION TEM PERATURE (°C)
150
175
0 .6
0
20
40
60
80
I
D
, DRAIN CURRENT (A)
100
120
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
60
GATE-SOURCE THRESHOLD VOLTAGE
1 .2
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
V
GS(th)
, NORMALIZED
1 .1
1
0 .9
0 .8
0 .7
0 .6
0 .5
-5 0
V
DS
= V
GS
I
D
= 250µA
T = -55°C
J
40
125°C
25°C
30
20
10
0
2
3
4
5
6
V
GS
, GATE TO SOURCE VOLTAGE (V)
7
-25
0
25
50
75
100
125
T
J
, JUNCTION TEM PERATURE (°C)
150
175
Figure 5. Transfer Characteristics
.
Figure 6. Gate Threshold Variation with
Temperature
.
NDP7050.SAM Rev. D
Typical Electrical Characteristics
(continued)
1 .15
DRAIN-SOURCE BREAKDOWN VOLTAGE
I
D
= 250µA
1 .1
100
50
V
GS
= 0V
I
S
, REVERSE DRAIN CURRENT (A)
10
BV
DSS
, NORMALIZED
TJ = 1 2 5 ° C
1
1 .05
25°C
-5 5 ° C
1
0.1
0 .95
0.01
0 .9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEM PERATURE (°C)
150
175
0.001
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORW A RD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
5000
20
3000
2000
V
GS
, GATE-SOURCE VOLTAGE (V)
Ciss
I
D
= 75A
15
V
DS
= 1 2 V
48V
CAPACITANCE (pF)
1000
Coss
10
24V
500
f = 1 MHz
V
GS
= 0V
Crss
5
300
200
1
2
5
10
20
30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
60
0
25
50
75
100
Q
g
, GATE CHARGE (nC)
125
150
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d (o n )
t
on
t
r
90%
t
off
t
d (off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
V
GS
V
OUT
10%
10%
INVERTED
R
GEN
G
90%
V
IN
S
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit
.
Figure 12. Switching Waveforms
.
NDP7050.SAM Rev. D
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