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NDP508A

Description
N-Channel Enhancement Mode Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size54KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

NDP508A Overview

N-Channel Enhancement Mode Field Effect Transistor

NDP508A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)19 A
Maximum drain current (ID)19 A
Maximum drain-source on-resistance0.08 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)57 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
May 1994
NDP508A / NDP508AE / NDP508B / NDP508BE
NDB508A / NDB508AE / NDB508B / NDB508BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
19 and 17A, 80V. R
DS(ON)
= 0.08 and 0.10Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 MΩ)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50
µs)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
J
,T
STG
T
L
T
C
= 25°C unless otherwise noted
NDP508A NDP508AE
NDB508A NDB508AE
80
80
±20
±40
19
57
75
0.5
NDP508B NDP508BE
NDB508B NDB508BE
Units
V
V
V
V
17
51
A
A
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
© 1997 Fairchild Semiconductor Corporation
NDP508.SAM

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NDP508A NDP508BE NDP508B NDP508AE NDB508BE NDB508B NDB508AE NDB508A
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