May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE
NDB708A / NDB708AE / NDB708B / NDB708BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
60 and 54A, 80V. R
DS(ON)
= 0.022 and 0.025Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 MΩ)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50
µs)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
C
= 25°C unless otherwise noted
NDP708A NDP708AE
NDB708A NDB708AE
80
80
±20
±40
60
180
150
1
NDP708B NDP708BE
NDB708B NDB708BE
Units
V
V
V
V
54
162
A
A
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
© 1997 Fairchild Semiconductor Corporation
NDP708.SAM
Electrical Characteristics
(T
Symbol
E
AS
I
AR
Parameter
Single Pulse Drain-Source
Avalanche Energy
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 25 V, I
D
= 60 A
Type
NDP708AE
NDP708BE
NDB708AE
NDB708BE
Min
Typ
Max
600
60
Units
mJ
A
DRAIN-SOURCE AVALANCHE RATINGS
(Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 80 V,
V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
,
I
D
= 250 µA
V
GS
= 10 V,
I
D
= 30 A
T
J
= 125°C
V
GS
= 10 V,
I
D
= 27 A
T
J
= 125°C
I
D(on)
On-State Drain Current
V
GS
= 10 V, V
DS
= 10 V
ALL
ALL
T
J
= 125°C
ALL
ALL
ALL
T
J
= 125°C
NDP708A
NDP708AE
NDB708A
NDB708AE
NDP708B
NDP708BE
NDB708B
NDB708BE
NDP708A
NDP708AE
NDB708A
NDB708AE
NDP708B
NDP708BE
NDB708B
NDB708BE
g
FS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10 V, I
D
= 30 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
ALL
ALL
ALL
ALL
DYNAMIC CHARACTERISTICS
60
2
1.4
2.6
1.9
0.016
0.025
80
250
1
100
-100
4
3.6
0.022
0.04
0.25
0.044
V
µA
mA
nA
nA
V
V
Ω
Ω
Ω
Ω
A
ON CHARACTERISTICS
(Note 2)
54
A
16
33
2800
780
285
3600
1000
400
S
pF
pF
pF
C
iss
C
oss
C
rss
NDP708.SAM
Electrical Characteristics
(T
Symbol
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
I
S
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
C
= 25°C unless otherwise noted)
Conditions
V
DD
= 40 V, I
D
= 60 A,
V
GS
= 10 V, R
GEN
= 5
Ω
Type
ALL
ALL
ALL
ALL
Min
Typ
15
143
58
108
94
16
51
Max
25
230
90
180
130
Units
nS
nS
nS
nS
nC
nC
nC
SWITCHING CHARACTERISTICS
(Note 2)
V
DS
= 64 V,
I
D
= 60 A, V
GS
= 10 V
ALL
ALL
ALL
NDP708A
NDP708AE
NDB708A
NDB708AE
NDP708B
NDP708BE
NDB708B
NDB708BE
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuos Drain-Source Diode Forward Current
60
A
54
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
NDP708A
NDP708AE
NDB708A
NDB708AE
NDP708B
NDP708BE
NDB708B
NDB708BE
180
A
162
A
V
SD
(Note 2)
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Current
V
GS
= 0 V,
I
S
= 30 A
V
GS
= 0 V, I
S
= 60 A,
dI
S
/dt = 100 A/µs
ALL
T
J
= 125°C
ALL
ALL
0.91
0.82
98
6.5
1.3
1.2
140
10
V
V
ns
A
t
rr
I
rr
R
θJC
R
θJA
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
ALL
ALL
1
62.5
°C/W
°C/W
Notes:
1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
NDP708.SAM
Typical Electrical Characteristics
120
2
V
GS
= 20V
I
D
, DRAIN-SOURCE CURRENT (A)
100
10
8.0
7.0
R
DS(on)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
1.6
1.4
1.2
V
GS
= 5V
6.0
7.0
8.0
10
80
6.0
60
40
5.0
1
0.8
0.6
20
20
4.0
0
0
1
V
DS
2
3
, DRAIN-SOURCE VOLTAGE (V)
4
5
0
20
40
60
80
I , DRAIN CURRENT (A)
D
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.4
2
I
D
= 30A
DRAIN-SOURCE ON-RESISTANCE
2
DRAIN-SOURCE ON-RESISTANCE
V
1.8
1.6
1.4
1.2
GS
= 10V
TJ = 125°C
V
GS
= 10V
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
1.6
1.2
25°C
1
0.8
0.6
0
20
40
60
I
D
, DRAIN CURRENT (A)
80
100
0.8
-55°C
0.4
-50
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
60
GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V
DS
= 10V
50
I
D
, DRAIN CURRENT (A)
TJ = -55°C
25
125
V
DS
= V
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
GS
I
D
= 250µA
40
30
20
10
0
2
3
V
GS
V
th
, NORMALIZED
4
5
6
, GATE TO SOURCE VOLTAGE (V)
7
-25
0
25
50
75
100
125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation
with Temperature.
NDP708.SAM
Typical Electrical Characteristics
(continued)
1.15
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
100
I
D
= 250µA
1.1
50
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
BV
DSS
, NORMALIZED
10
TJ = 125°C
25°C
-55°C
1.05
2
1
1
0.95
0.1
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.01
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage
Variation with Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
5000
C iss
V
GS
, GATE-SOURCE VOLTAGE (V)
3000
2000
CAPACITANCE (pF)
15
I
D
= 60A
V
DS
= 12V
24
64
1000
C oss
10
500
C rss
f = 1 MHz
V
GS
= 0 V
100
1
2
V
DS
5
0
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
50
0
40
80
Q
g
, GATE CHARGE (nC)
120
160
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
V
DD
t
d(on)
t
on
t
r
90%
t
off
t
d(off)
90%
t
f
V
IN
D
R
L
V
OUT
DUT
Output, Vout
V
GS
10%
10%
90%
R
GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP708.SAM
Microcontroller MCU
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