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NDB708AE

Description
N-Channel Enhancement Mode Field Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size55KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

NDB708AE Overview

N-Channel Enhancement Mode Field Effect Transistor

NDB708AE Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)600 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage80 V
Maximum drain current (Abs) (ID)60 A
Maximum drain current (ID)60 A
Maximum drain-source on-resistance0.022 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE
NDB708A / NDB708AE / NDB708B / NDB708BE
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
60 and 54A, 80V. R
DS(ON)
= 0.022 and 0.025Ω.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D
2
PAK) package for both
through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
T
J
,T
STG
T
L
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 MΩ)
Gate-Source Voltage - Continuous
- Nonrepetitive (t
P
< 50
µs)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
T
C
= 25°C unless otherwise noted
NDP708A NDP708AE
NDB708A NDB708AE
80
80
±20
±40
60
180
150
1
NDP708B NDP708BE
NDB708B NDB708BE
Units
V
V
V
V
54
162
A
A
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
-65 to 175
275
© 1997 Fairchild Semiconductor Corporation
NDP708.SAM

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