SIHF9540PBF datasheet, PDF - EEWORLD Datasheet

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SIHF9540PBF: DescriptionVishay -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V; Categoryunclassified; File Size281KB，9 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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Vishay -100V Vds +/-20V Vgs Rds(on) 0.20 @-10V

SIHF9540PBF Parametric

Parameter Name	Attribute value
Product Category	Vishay
Manufacturer	Vishay
RoHS	Details

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IRF9540, SiHF9540

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

= - 10 V

Single

FEATURES

- 100

0.20

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

TO-220AB

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

TO-220AB

IRF9540PbF

SiHF9540-E3

IRF9540

SiHF9540

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

at - 10 V

= 25 °C

= 100 °C

SYMBOL

dV/dt

, T

stg

LIMIT

- 100

± 20

- 19

- 13

- 72

1.0

640

- 19

150

- 5.5

- 55 to + 175

300

1.1

UNIT

W/°C

V/ns

°C

lbf · in

N·m

= 25 °C

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

= - 25 V, starting T

= 25 °C, L = 2.7 mH, R

= 25

,

= - 19 A (see fig. 12).

c. I



- 19 A, dI/dt



200 A/μs, V



, T



175 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91078

S11-0512-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

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