FLL351ME datasheet, PDF - EEWORLD Datasheet

FLL351ME: DescriptionL-band medium & high power gaas FTEs; CategoryDiscrete semiconductor The transistor; File Size212KB，4 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

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FLL351ME Overview

L-band medium & high power gaas FTEs

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	HERMETIC SEALED, METAL CERAMIC PACKAGE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	15 V
FET technology	JUNCTION
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Maximum operating temperature	175 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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