2SC5810
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
•
•
•
High DC current gain: h
FE
= 400 to 1000 (I
C
= 0.1 A)
Low collector-emitter saturation voltage: V
CE (sat)
= 0.17 V (max)
High-speed switching: t
f
= 85 ns (typ.)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
DC
t = 10 s
DC
Pulse
Symbol
V
CBO
V
CEX
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
(Note)
T
j
T
stg
Rating
100
80
50
7
1.0
2.0
0.1
2.0
1.0
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1A
Weight: 0.05 g (typ.)
Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
C
ob
t
r
t
stg
t
f
Test Condition
V
CB
= 100 V, I
E
= 0
V
EB
= 7 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 2 V, I
C
= 0.1 A
V
CE
= 2 V, I
C
= 0.3 A
I
C
= 300 mA, I
B
= 6 mA
I
C
= 300 mA, I
B
= 6 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
See Figure 1.
V
CC
≈
30 V, R
L
=
100
Ω
I
B1
=
−I
B2
=
10 mA
Min
―
―
50
400
200
―
―
―
―
―
―
Typ.
―
―
―
―
―
―
―
5
35
680
85
Max
100
100
―
1000
―
0.17
1.10
―
⎯
―
―
ns
V
V
pF
Unit
nA
nA
V
1
2004-07-07
2SC5810
Marking
V
CC
20
µs
R
L
I
B1
I
B2
I
B2
Duty cycle
<
1%
Lot No.
I
B1
Output
Part No. (or abbreviation code)
Input
3
C
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Figure 1
Switching Time Test Circuit &
Timing Chart
2
2004-07-07
2SC5810
I
C
−
V
CE
1
20
0.8
15
10
8
10000
h
FE
−
I
C
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
I
C
(A)
6
h
FE
4
0.6
2
0.4
IB
=
1 mA
0.2
Ta
=
100°C
1000
Collector current
DC current gain
25
100
−55
0
0
Common emitter
Ta
=
25 °C
Single nonrepetitive pulse
0
0.2
0.4
0.6
0.8
1
1.2
30
0.001
0.003
0.01
0.03
0.1
0.3
1
Collector-emitter voltage
V
CE
(V)
Collector current I
C
(A)
V
CE (sat)
−
I
C
1
Common emitter
10
IC/IB
=
50
0.3 Single nonrepetitive pulse
V
BE (sat)
−
I
C
Common emitter
IC/IB
=
50
Single nonrepetitive pulse
25
1
Ta
=
100°C
−55
Collector-emitter saturation voltage
V
CE (sat)
(V)
Base-emitter saturation voltage
V
BE (sat)
(V)
0.3
1
3
0.1
Ta
=
100°C
0.03
25
0.01
−55
0.3
0.1
0.003
0.001
0.003
0.01
0.03
0.1
0.03
0.001
0.003
0.01
0.03
0.1
0.3
1
Collector current I
C
(A)
Collector current I
C
(A)
I
C
– V
BE
1.0
Common emitter
VCE
=
2 V
Single nonrepetitive pulse
I
C
(A)
Collector current
0.8
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage
V
BE
(V)
3
2004-07-07
2SC5810
r
th
– t
w
1000
Transient thermal resistance
rth (j-a) (°C/W)
300
100
30
10
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
=
25°C
Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm )
1
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
30
100
300
1000
2
3
Pulse width
t
w
(s)
Safe Operating Area
10
(A)
3
IC max (pulsed)*
IC max (continuous)
DC operation
(Ta
=
25°C)
10 ms* 1 ms* 100
µs*
10 s*
10
µs*
Collector current I
C
1
0.3
100 ms*
*:
Single nonrepetitive pulse
Ta
=
25°C
0.1 Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
0.03 epoxy, 1.6 mm thick, Cu area:
645 mm
2
). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.3
3
0.1
1
10
30
VCEO max
100
Collector-emitter voltage
V
CE
(V)
4
2004-07-07
2SC5810
RESTRICTIONS ON PRODUCT USE
•
The information contained herein is subject to change without notice.
030619EAA
•
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
•
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
5
2004-07-07
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