KTD1854T datasheet, PDF - EEWORLD Datasheet

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KTD1854T: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size68KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTD1854T Overview

EPITAXIAL PLANAR NPN TRANSISTOR

KTD1854T Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	50 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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SEMICONDUCTOR

TECHNICAL DATA

DRIVER APPLICATIONS.

FEATURES

AF amplifier, solenoid drivers, LED drivers.

Darlington connection.

High DC current gain.

Very small-sized package permitting sets to be made

smaller and slimer.

Complementary to KTB1234T.

KTD1854T

EPITAXIAL PLANAR NPN TRANSISTOR

E

K

B

DIM

A

B

G

2

3

C

D

MILLIMETERS

_

2.9 + 0.2

1.6+0.2/-0.1

_

0.70 + 0.05

_

0.4 + 0.1

2.8+0.2/-0.3

_

1.9 + 0.2

0.95

_

0.16 + 0.05

0.00-0.10

0.25+0.25/-0.15

0.60

0.55

A

F

D

1

E

F

G

H

I

J

K

L

C

J

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

DC

Pulse

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

*

T

j

T

stg

0.8

RATING

80

50

10

200

400

0.9

150

-55 150

)

UNIT

V

mA

W

1. EMITTER

2. BASE

3. COLLECTOR

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

* Package mounted on a ceramic board (600

Marking

EQUIVALENT CIRCUIT

COLLECTOR

Type Name

BASE

EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

SYMBOL

I

CBO

I

EBO

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

h

FE

1

h

FE

2

V

CE(sat)

V

BE(sat)

TEST CONDITION

V

CB

=60V, I

E

=0

V

EB

=8V, I

C

=0

I

C

=10 A, I

E

=0

I

C

=1mA, I

B

=0

I

C

=10 A, I

C

=0

V

CE

=2V, I

C

=10mA

V

CE

=2V, I

C

=100mA

I

C

=100mA, I

B

=100 A

I

C

=100mA, I

B

=100 A

MIN.

-

80

50

10

5000

4000

-

0.9

1.5

-

1.5

2.0

V

TYP.

-

MAX.

100

UNIT

nA

V

2001. 10. 23

Revision No : 0

I

MAXIMUM RATINGS (Ta=25

)

L

G

H

J

TSM

Lot No.

LY

1/2

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