PD-93783F
IRHG6110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRHG6110
IRHG63110
IRHG6110
IRHG63110
Radiation Level
100 kRads(Si)
300 kRads(Si)
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.6
0.6
1.1
1.1
I
D
1.0A
1.0A
-0.75A
-0.75A
Channel
N
N
P
P
100V, Combination 2N-2P CHANNEL
RAD-Hard™ HEXFET
®
TECHNOLOGY
MO-036AB
Description
IR HiRel RAD-Hard™ HEXFET
®
MOSFET Technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low RDS(on)
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Symbol
I
D1
@ V
GS
= ±12V, T
C
= 25°C
I
D2
@ V
GS
= ±12V, T
C
= 100°C
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
N-Channel
1.0
0.6
4.0
1.4
0.011
± 20
56
1.0
0.14
2.4
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
P-Channel
-0.75
-0.5
-3.0
1.4
0.011
± 20
75
-0.75
0.14
2.4
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
-55 to +150
300 (0.63in/1.6mm from case for 10s)
1.3 (Typical)
For Footnotes, refer to the page 2 for N Channel and page 3 for P Channel
1
International Rectifier HiRel Products, Inc.
2019-05-24
IRHG6110
Pre-Irradiation
Electrical Characteristics for Each N-Channel Device @ Tj = 25°C
(Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
100
–––
–––
–––
2.0
0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.125
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
300
100
16
–––
–––
0.7
0.6
4.0
–––
25
250
100
-100
11
3.0
4.0
20
16
65
45
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 1.0mA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 12V, I
D
= 1.0A
V
GS
= 12V, I
D
= 0.6A
V
V
DS
= V
GS
, I
D
= 1.0mA
S
V
DS
= 15V, I
D2
= 0.6A
V
DS
= 80V, V
GS
= 0V
µA
V
DS
= 80V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
I
D1
= 1.0A
nC
V
DS
= 50V
V
GS
= 12V
V
DD
= 50V
I
D1
= 1.0A
ns
R
G
= 7.5
V
GS
= 12V
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics for Each N-Channel Device
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Symbol
R
JC
R
JA
Junction-to-Case *
Junction-to-Ambient (Typical socket mount)
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
4.0
1.5
110
390
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 1.0A, V
GS
= 0V
T
J
=25°C, I
F
= 1.0A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance for Each N-Channel Device
Parameter
Min.
–––
–––
Typ.
–––
–––
Max.
17
90
Units
°C/W
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L =112mH, Peak I
L
= 1.0A, V
GS
= 12V
V
I
SD
1.0A, di/dt
187A/µs, V
DD
100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 80volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-05-24
IRHG6110
Pre-Irradiation
Electrical Characteristics for Each P-Channel Device @ Tj = 25°C
(Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 –––
––– -0.11
–––
–––
-2.0
0.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
335
100
22
–––
–––
1.2
1.1
-4.0
–––
-25
-250
-100
100
15
4.0
4.3
22
19
66
51
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D2
= -0.75A
V
GS
= -12V, I
D2
= -0.5A
V
V
DS
= V
GS
, I
D
= -1.0mA
S
V
DS
= -15V, I
D2
= -0.5A
V
DS
= -80V, V
GS
= 0V
µA
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
nA
V
GS
= 20V
I
D1
= -0.75A
nC
V
DS
= -50V
V
GS
= -12V
V
DD
= -50V
I
D1
= -0.75A
ns
R
G
= 24
V
GS
= -12V
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
V
GS
= 0V
pF
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics for Each P-Channel Device
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-0.75
-3.0
-2.5
90
257
A
V
ns
nC
Test Conditions
T
J
=25°C,I
S
= -0.75A, V
GS
=0V
T
J
=25°C, I
F
=0.75A, V
DD
≤
-25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance for Each N-Channel Device
Symbol
R
JC
R
JA
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= -25V, starting T
J
= 25°C, L = 267mH, Peak I
L
= -0.75A, V
GS
= -12V
V
I
SD
-0.75A, di/dt
-132A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. -12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. -80volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
Parameter
Junction-to-Case *
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
Typ.
–––
–––
Max.
17
90
Units
°C/W
°C/W
3
International Rectifier HiRel Products, Inc.
2019-05-24
IRHG6110
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics for Each N-Ch. Dev.
@ Tj = 25°C
,
Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
100 kRads (Si)
1
Min.
100
2.0
–––
–––
–––
–––
–––
–––
Max.
–––
4.0
100
-100
25
0.56
0.60
1.5
300 kRads (Si)
2
Min.
100
1.25
–––
–––
–––
–––
–––
–––
Max.
–––
4.5
100
-100
25
0.66
0.70
1.5
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= 1.0mA
V
DS
= V
GS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
= 80V, V
GS
= 0V
V
GS
= 12V, I
D2
= 0.6A
V
GS
= 12V, I
D2
= 0.6A
V
GS
= 0V, I
S
= 1.0A
Units
Test Conditions
1. Part number IRHG6110
2. Part numbers IRHG63110
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area for Each N-Channel Device
Ion
Cu
Br
LET
(MeV/(mg/cm
2
))
28.0
36.8
Energy
(MeV)
285
305
Range
(µm)
43.0
39.0
V
DS
(V)
@V
GS
=0V
100
100
@V
GS
=-5V
100
90
@V
GS
=-10V
100
70
@V
GS
=-15V
80
50
@V
GS
=-20V
60
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
4
International Rectifier HiRel Products, Inc.
2019-05-24
IRHG6110
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics for Each P-Ch. Dev.
@ Tj = 25°C, Post Total Dose Irradiation
Parameter
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
100 kRads (Si)
1
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
1.06
1.1
-2.5
300 kRads (Si)
2
Min.
-100
-2.0
–––
–––
–––
–––
–––
–––
Max.
–––
-4.0
-100
100
-25
1.06
1.1
-2.5
V
V
nA
nA
µA
V
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
V
GS
= 20V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D2
= -0.5A
V
GS
= -12V, I
D2
= -0.5A
V
GS
= 0V, I
D
= -0.75A
Units
Test Conditions
1. Part number IRHG6110
2. Part number IRHG63110
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area for Each N-Channel Device
Ion
Cu
Br
I
LET
(MeV/(mg/cm
2
))
28.0
36.8
59.8
Energy
(MeV)
285
305
343
Range
(µm)
43.0
39.0
32.6
V
DS
(V)
@V
GS
=0V
-100
-100
-60
@V
GS
=5V
-100
-100
–––
@V
GS
=10V
-100
-70
–––
@V
GS
=15V
-70
-50
–––
@V
GS
=20V
-60
-40
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 3.
5
International Rectifier HiRel Products, Inc.
2019-05-24
京公网安备 11010802033920号
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