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IRHG6110PBF

Description
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN
CategoryDiscrete semiconductor    The transistor   
File Size4MB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
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IRHG6110PBF Overview

Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN

IRHG6110PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIP
package instructionIN-LINE, R-CDIP-T14
Contacts14
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)56 mJ
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-036AB
JESD-30 codeR-CDIP-T14
Number of components4
Number of terminals14
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Maximum power consumption environment1.4 W
Maximum pulsed drain current (IDM)4 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)80 ns
Maximum opening time (tons)45 ns
PD-93783F
IRHG6110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number
IRHG6110
IRHG63110
IRHG6110
IRHG63110
Radiation Level
100 kRads(Si)
300 kRads(Si)
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.6
0.6
1.1
1.1
I
D
1.0A
1.0A
-0.75A
-0.75A
Channel
N
N
P
P
100V, Combination 2N-2P CHANNEL
RAD-Hard™ HEXFET
®
TECHNOLOGY
MO-036AB
Description
IR HiRel RAD-Hard™ HEXFET
®
MOSFET Technology
provides high performance power MOSFETs for space
applications. This technology has over a decade of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low RDS(on)
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Symbol
I
D1
@ V
GS
= ±12V, T
C
= 25°C
I
D2
@ V
GS
= ±12V, T
C
= 100°C
I
DM
@T
C
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
N-Channel
1.0
0.6
4.0
1.4
0.011
± 20
56
1.0
0.14
2.4
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
P-Channel
-0.75
-0.5
-3.0
1.4
0.011
± 20
75
-0.75
0.14
2.4
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
-55 to +150
 
300 (0.63in/1.6mm from case for 10s)
 
1.3 (Typical)
For Footnotes, refer to the page 2 for N Channel and page 3 for P Channel
1
International Rectifier HiRel Products, Inc.
2019-05-24

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Description Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED, CERAMIC, MO-036AB, 14 PIN Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
Is it lead-free? Lead free Lead free Contains lead
Is it Rohs certified? conform to conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction IN-LINE, R-CDIP-T14 IN-LINE, R-CDIP-T14 IN-LINE, R-CDIP-T14
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 56 mJ 56 mJ 56 mJ
Configuration SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V
Maximum drain current (ID) 1 A 1 A 1 A
Maximum drain-source on-resistance 0.7 Ω 0.7 Ω 0.7 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MO-036AB MO-036AB MO-036AB
JESD-30 code R-CDIP-T14 R-CDIP-T14 R-CDIP-T14
Number of components 4 4 4
Number of terminals 14 14 14
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM) 4 A 4 A 4 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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