VTVS3V3ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
400 W TransZorb
®
Transient Voltage Suppressor (TVS)
Diode in SMF-Package
FEATURES
• 400 W peak pulse power capability with a
10/1000 μs waveform
1
2
Available
20278
17249
• Tolerance of the avalanche breakdown voltage
± 5 % VTVSxxxA...
± 2 % VTVSxxxG...
• Low-profile package
• Wave and reflow solderable
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Excellent clamping capability
• “Low-Noise” technology - very fast response time
• AEC-Q101 qualified available
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
BR
V
WM
P
PPM
T
J
max.
Polarity
Package
6.4 V to 78.2 V
3.3 V to 63 V
400 W
175 °C
Uni-directional
SMF (DO-219AB)
MARKING
(example only)
Bar = cathode marking
YYY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS
click logo to get started
Models
Available
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART NUMBER
(EXAMPLE)
TOLERANCE
V
BR
AEC-Q101
QUALIFIED
RoHS-COMPLIANT +
LEAD (Pb)-FREE
TERMINATIONS
HALOGEN-FREE
VTVS5V0ASMF-
VTVS5V0ASMF-
VTVS5V0ASMF-
VTVS5V0ASMF-
VTVS5V0GSMF-
VTVS5V0GSMF-
VTVS5V0GSMF-
VTVS5V0GSMF-
±5%
±5%
±5%
±5%
±2%
±2%
±2%
±2%
H
H
H
H
M
M
M
M
M
M
M
M
PACKAGING CODE
10K PER
13" REEL
(8 mm TAPE),
50K/BOX =
MOQ
ORDERING CODE
(EXAMPLE)
3K PER
7" REEL
TIN
(8 mm TAPE),
PLATED
30K/BOX =
MOQ
3
3
3
3
3
3
3
3
-08
-08
-18
-18
-08
-08
-18
-18
PACKAGE DATA
PACKAGE
NAME
SMF
(DO-219AB)
MOLDING WEIGHT
COMPOUND
(mg)
Halogen-free
15
MOLDING
HEIGHT LENGTH WIDTH
COMPOUND
MAX.
MAX.
MAX.
FLAMMABILITY
(mm)
(mm)
(mm)
RATING
1.08
3.9
1.9
UL 94 V-0
MOISTURE
SENSITIVITY
LEVEL
MSL level 1
(acc. J-STD-020)
WHISKER
TEST ACC.
JESD 201
class 2
SOLDERING
CONDITIONS
Peak temperature
max. 260 °C
XX
YYY
Rev. 1.5, 07-Feb-18
22623
VTVS5V0ASMF-M3-08
VTVS5V0ASMF-HM3-08
VTVS5V0ASMF-M3-18
VTVS5V0ASMF-HM3-18
VTVS5V0GSMF-M3-08
VTVS5V0GSMF-HM3-08
VTVS5V0GSMF-M3-18
VTVS5V0GSMF-HM3-18
Document Number: 85891
1
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VTVS3V3ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
Thermal resistance
Forward clamping voltage
Operating temperature
Storage temperature
TEST CONDITIONS
t
p
= 10/1000 μs waveform
t
p
= 10/1000 μs waveform
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Mounted on infinite heat sink
I
F
= 50 A, t
p
= 1 ms
Junction temperature
SYMBOL
I
PPM
P
PP
V
ESD
R
thJL
V
F
T
J
T
STG
VALUE
see “Electrical
Characteristics”
400
± 30
± 30
20
1.8
-55 to +175
-55 to +175
UNIT
A
W
kV
kV
K/W
V
°C
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
TYPE
CODE
PART
NUMBER
HALOGEN-
FREE
VTVS3V3ASMF
VTVS5V0ASMF
VTVS8V5ASMF
VTVS9V4ASMF
VTVS10ASMF
VTVS11ASMF
VTVS12ASMF
VTVS14ASMF
VTVS15ASMF
VTVS17ASMF
VTVS19ASMF
VTVS21ASMF
VTVS23ASMF
VTVS25ASMF
VTVS28ASMF
VTVS31ASMF
VTVS33ASMF
VTVS36ASMF
VTVS40ASMF
VTVS43ASMF
VTVS47ASMF
VTVS52ASMF
VTVS58ASMF
VTVS63ASMF
9Z5
905
915
925
935
945
955
965
975
985
995
9A5
9B5
9C5
9D5
9E5
9F5
9G5
9H5
9J5
9K5
9L5
9M5
9N5
REVERSE
BREAKDOWN
VOLTAGE
at
T
J
= 25 °C,
I
T
= 1 mA
V
BR
(V)
MIN.
6.4
6.4
9.5
10.5
11.4
12.6
14.0
15.4
17.1
19.0
20.9
23.0
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
70.8
V
BR
(V)
MAX.
7.0
7.0
10.5
11.6
12.7
13.9
15.4
17.0
18.8
21.0
23.2
25.4
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
78.2
STAND-OFF
VOLTAGE
MAXIMUM
REVERSE
CURRENT
at
V
RWM
I
R
(μA)
0.05
5
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
MAXIMUM
PEAK
PULSE
CURRENT
t
p
=
10/1000 μs
I
PPM
(A)
42.95
42.95
28.24
25.48
23.20
21.13
19.01
17.16
15.47
13.79
12.44
11.33
10.09
9.07
8.21
7.51
6.91
6.24
5.70
5.23
4.76
4.28
3.89
3.54
MAXIMUM
REVERSE
CLAMPING
VOLTAGE
at
I
PPM
V
C
(V)
8.9
8.9
13.5
14.9
16.3
18.0
20.1
22.2
25
28
31
34
38
42
47
51
55
61
67
73
80
89
98
108
TYPICAL
CAP.
at
V
R
= 0 V,
f = 1 MHz
C
D
(pF)
2095
2095
1270
1130
988
910
807
752
684
606
558
513
480
433
412
380
379
342
309
292
293
242
245
227
PROTECTION
PATHS
V
RWM
(V)
3.3
5.00
8.50
9.40
10.30
11.20
12.40
13.80
15.10
16.90
18.70
20.50
22.60
25.20
27.90
30.60
33.30
36.00
39.60
43.20
46.80
52.20
57.60
63.00
N
channel
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. 1.5, 07-Feb-18
Document Number: 85891
2
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VTVS3V3ASMF to VTVS63GSMF
www.vishay.com
Vishay Semiconductors
MAXIMUM
PEAK
PULSE
CURRENT
t
p
=
10/1000 μs
I
PPM
(A)
43.99
43.99
29.10
26.23
23.98
21.75
19.53
17.67
15.89
14.21
12.84
11.67
10.40
9.35
8.45
7.74
7.11
6.43
5.87
5.39
4.90
4.41
4.01
3.65
MAXIMUM
REVERSE
CLAMPING
VOLTAGE
at
I
PPM
V
C
(V)
8.9
8.9
13.5
14.9
16.3
18.0
20.1
22.2
25
28
31
34
38
42
47
51
55
61
67
73
80
89
98
108
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
TYPE
CODE
PART
NUMBER
HALOGEN-
FREE
VTVS3V3GSMF
VTVS5V0GSMF
VTVS8V5GSMF
VTVS9V4GSMF
VTVS10GSMF
VTVS11GSMF
VTVS12GSMF
VTVS14GSMF
VTVS15GSMF
VTVS17GSMF
VTVS19GSMF
VTVS21GSMF
VTVS23GSMF
VTVS25GSMF
VTVS28GSMF
VTVS31GSMF
VTVS33GSMF
VTVS36GSMF
VTVS40GSMF
VTVS43GSMF
VTVS47GSMF
VTVS52GSMF
VTVS58GSMF
VTVS63GSMF
9Z2
902
912
922
932
942
952
962
972
982
992
9A2
9B2
9C2
9D2
9E2
9F2
9G2
9H2
9J2
9K2
9L2
9M2
9N2
REVERSE
BREAKDOWN
VOLTAGE
at
T
J
= 25 °C,
I
T
= 1 mA
V
BR
(V)
MIN.
6.57
6.57
9.80
10.83
11.81
12.99
14.41
15.88
17.60
19.60
21.61
23.72
26.51
29.40
32.39
35.28
38.27
42.19
46.11
50.03
54.88
60.76
66.64
73.01
V
BR
(V)
MAX.
6.84
6.84
10.20
11.28
12.30
13.52
15.00
16.53
18.31
20.40
22.50
24.69
27.60
30.60
33.72
36.72
39.84
43.92
48.00
52.08
57.12
63.24
69.36
75.99
STAND-OFF
VOLTAGE
MAXIMUM
REVERSE
CURRENT
at
V
RWM
I
R
(μA)
0.05
5
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
TYPICAL
CAP.
at
V
R
= 0 V,
f = 1 MHz
C
D
(pF)
2095
2095
1270
1130
988
910
807
752
684
606
558
513
480
433
412
380
379
342
309
292
293
242
245
227
PROTECTION
PATHS
V
RWM
(V)
3.3
5.00
8.50
9.40
10.30
11.20
12.40
13.80
15.10
16.90
18.70
20.50
22.60
25.20
27.90
30.60
33.30
36.00
39.60
43.20
46.80
52.20
57.60
63.00
N
channel
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. 1.5, 07-Feb-18
Document Number: 85891
3
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VTVS3V3ASMF to VTVS63GSMF
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Axis Title
110
100
90
80
70
2nd line
I
RSM
(%)
60
50
40
30
20
10
0
0
22881
Vishay Semiconductors
10000
Rise time 10 µs to 100 %
500
400
300
200
1000
1st line
2nd line
1000 µs to 50 %
2nd line
C
D
(pF)
100
50
40
30
20
100
..25..
..28..
..31..
..33..
..36..
..40..
..43..
..47..
..52..
..58..
..63..
1000
t (µs)
2nd line
2000
10
3000
10
0.01 %
22863_2
0.1 %
1%
10 %
100 %
V
R
(V) in % of the Max. Working Voltage V
RWM
2nd line
Fig. 1 - 10/1000 μs Peak Pulse Current Wave Form
Fig. 4 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Axis Title
100
2nd line
Z
th
- Thermal Impedance (K/W)
Z
thJA
: Junction to
ambient (Diode
soldered on PCB with
minimal foot print)
Axis Title
10000
120
100
1000
1st line
2nd1st line
line
2nd line
2nd line
V
C
(V)
80
60
40
20
VTVS63ASMF
..58..
..52..
..47..
..43..
..40..
..36..
..33..
.31..
10000
10
1000
1st line
2nd line
.28..
.25..
1
Z
thJL
: Junction to lead
(infinite heat sink - leads
clamped between big
copper blocks)
100
100
0.1
0.0001 0.001
22861
10
0.01
0.1
1
10
100
t
p
- Pulse Width (s)
2nd line
0
0
22862_01
10
2
4
6
8
10
12
14
I
PP
(A)
2nd line
Fig. 2 - Thermal Impedance vs. Time
Fig. 5 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Axis Title
3000
..5V0.. ..3V3..
45
40
..8V5..
VTVS25ASMF
..23..
..21..
..19..
..17..
..15..
..14..
..12..
..11..
..10....9V4..
..8V5..
..5V0..
..3V3..
10000
2000
35
30
2nd line
V
C
(V)
25
20
15
10
5
0
1000
2nd line
C
D
(pF)
1000
1st line
2nd line
100
10
50
60
500
400
300
200
100
0.01 %
22863_1
..9V4..
..10..
..11..
..12..
..14..
..15..
..17..
..19..
..21..
..23..
0.1 %
1%
10 %
100 %
22862_02
0
10
20
30
I
PP
(A)
2nd line
40
V
R
(V) in % of the Max. Working Voltage V
RWM
2nd line
2nd line
Fig. 3 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 6 - Typical Peak Clamping Voltage vs. Peak Pulse Current
Rev. 1.5, 07-Feb-18
Document Number: 85891
4
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VTVS3V3ASMF to VTVS63GSMF
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SMF
0.85 [0.033]
0.35 [0.014]
Vishay Semiconductors
1.8 [0.071] min.
0.25 [0.010]
0.05 [0.002]
1.2 [0.047]
0.8 [0.031]
1.9 [0.075]
1.7 [0.067]
5°
0.1 [0.004]
0 [0.000]
Detail Z
enlarged
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
1.08 [0.043]
0.88 [0.035]
foot print recommendation:
Reflow
soldering
1.3 [0.051]
1.3 [0.051]
1.4 [0.055]
2.9 [0.114]
Created - Date: 15. February 2005
Rev. 5 - Date: 09. Oct. 2017
Document no.: S8-V-3915.01-001 (4)
22989
Rev. 1.5, 07-Feb-18
Document Number: 85891
5
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
5°
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