MV837 datasheet, PDF - EEWORLD Datasheet

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MV837: Description56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7; Categorysemiconductor Discrete semiconductor; File Size31KB，1 Pages; ManufacturerKnox; Websitehttp://www.knoxsemiconductor.com/

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56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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ABRUPT VARACTOR DIODES

MV830 - MV840

PART

NUMBER

C

T

DIODE CAPACITANCE

Vr = 4 Vdc, f = 1 MHz

(pF)

MIN

NOM

MAX

13.5

16.2

19.8

24.3

29.7

35.1

42.3

50.4

61.2

73.8

90.0

15.0

18.0

22.0

27.0

33.0

39.0

47.0

56.0

68.0

82.0

100.0

16.5

19.8

24.2

29.7

36.3

42.9

51.7

61.6

74.8

90.2

110.0

Q, QUALITY FACTOR

Vr = 4 Vdc

f = 50 MHz

MIN

TYP

30

25

20

15

10

35

30

25

20

15

TR, TUNING RATIO

f = 1 MHz

C•4V / C•25V

MIN

TYP

1.8

1.9

2.0

2.00

2.10

2.12

2.15

2.18

MV830

MV831

MV832

MV833

MV834

MV835

MV836

MV837

MV838

MV839

MV840

Package Style

DC Power Dissipation

Min Reverse Breakdown Voltage

Max Reverse Current (I

R

)

Operating Temperature (Topr)

Storage Temperature (Tstg)

unction Temperature

@ Ta = 25° C

@ Ir = 10 µA

@ 25 Vdc

DO-7

400 mW

30 Vdc

0.2 µA

-65 to + 150° C

-65 to + 200 ° C

+ 175° C

P.O. BOX 609

•

ROCKPORT, MAINE 04856

•

207-236-6076

•

FAX 207-236-9558

MV837 Related Products

	MV837	MV840	MV839	MV838	MV836	MV835	MV834	MV832	MV833
Description	56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE	VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7	VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

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