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MV835

Description
VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
Categorysemiconductor    Discrete semiconductor   
File Size31KB,1 Pages
ManufacturerKnox
Websitehttp://www.knoxsemiconductor.com/
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MV835 Overview

VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7

ABRUPT VARACTOR DIODES
MV830 - MV840
PART
NUMBER
C
T
DIODE CAPACITANCE
Vr = 4 Vdc, f = 1 MHz
(pF)
MIN
NOM
MAX
13.5
16.2
19.8
24.3
29.7
35.1
42.3
50.4
61.2
73.8
90.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
100.0
16.5
19.8
24.2
29.7
36.3
42.9
51.7
61.6
74.8
90.2
110.0
Q, QUALITY FACTOR
Vr = 4 Vdc
f = 50 MHz
MIN
TYP
30
25
25
25
20
20
15
15
15
10
10
35
30
30
30
25
25
20
20
20
15
15
TR, TUNING RATIO
f = 1 MHz
C•4V / C•25V
MIN
TYP
1.8
1.8
1.8
1.8
1.9
1.9
1.9
1.9
2.0
2.0
2.0
2.00
2.00
2.10
2.10
2.12
2.12
2.15
2.15
2.18
2.18
2.18
MV830
MV831
MV832
MV833
MV834
MV835
MV836
MV837
MV838
MV839
MV840
Package Style
DC Power Dissipation
Min Reverse Breakdown Voltage
Max Reverse Current (I
R
)
Operating Temperature (Topr)
Storage Temperature (Tstg)
unction Temperature
@ Ta = 25° C
@ Ir = 10 µA
@ 25 Vdc
DO-7
400 mW
30 Vdc
0.2 µA
-65 to + 150° C
-65 to + 200 ° C
+ 175° C
P.O. BOX 609
ROCKPORT, MAINE 04856
207-236-6076
FAX 207-236-9558

MV835 Related Products

MV835 MV840 MV839 MV838 MV836 MV837 MV834 MV832 MV833
Description VHF-UHF BAND, 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 82 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VHF-UHF BAND, 68 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 47 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 56 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 22 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 VHF-UHF BAND, 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7
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