MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MUN5311DW1T1/D
Dual Bias Resistor Transistors
NPN and PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base resistor and a
base–emitter resistor. These digital transistors are designed to replace a single
device and its external resistor bias network. The BRT eliminates these
individual components by integrating them into a single device. In the
MUN5311DW1T1 series, two complementary BRT devices are housed in the
SOT–363 package which is ideal for low power surface mount applications
where board space is at a premium.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1
SERIES
Motorola Preferred Devices
6
5
4
1
2
3
CASE 419B–01, STYLE 1
SOT–363
(3)
R1
Q1
(2)
R2
(1)
Q2
R2
(4)
(5)
R1
(6)
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
VCBO
VCEO
IC
R
θJA
TJ, Tstg
PD
Marking
11
12
13
14
15
16
30
31
32
33
34
35
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
Value
50
50
100
Unit
Vdc
Vdc
mAdc
°C/W
°C
mW
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation @ TA = 25°C(1)
833
– 65 to +150
*150
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
Device
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1(2)
MUN5316DW1T1(2)
MUN5330DW1T1(2)
MUN5331DW1T1(2)
MUN5332DW1T1(2)
MUN5333DW1T1(2)
MUN5334DW1T1(2)
MUN5335DW1T1(2)
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
ICBO
ICEO
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
—
—
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (IC = 10
µA,
IE = 0)
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
—
60
100
140
140
350
350
5.0
15
30
200
150
140
—
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ)
MUN5311lDW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
MUN5313DW1T1
VCE(sat)
VOL
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ)
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (PNP) omitted)
(Continued)
Characteristic
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ)
MUN5330DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ)
MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
Input Resistor
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
Symbol
VOH
Min
4.9
Typ
—
Max
—
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
0.8
0.17
—
0.8
0.055
0.38
0.038
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
1.0
0.21
—
1.0
0.1
0.47
0.047
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
1.2
0.25
—
1.2
0.185
0.56
0.056
k
Ω
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
R
θJA
= 833°C/W
50
0
– 50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
0.1
75°C
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = 10 V
TA = 75°C
25°C
–25°C
100
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
50
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
4
f = 1 MHz
IE = 0 V
TA = 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5311DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = –25°C
0.1
25°C
75°C
TA = 75°C
25°C
100
–25°C
0.01
0
20
IC, COLLECTOR CURRENT (mA)
40
50
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0.001
0
1
2
VO = 5 V
6
7
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 9. Output Capacitance
Figure 10. Output Current versus Input
Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
TA = –25°C
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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