ES1E datasheet, PDF - EEWORLD Datasheet

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ES1E: Description1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size172KB，2 Pages; ManufacturerTransys Electronics Limited; Websitehttp://www.transyselectronics.com

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ES1E Overview

1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC

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ES1A THRU ES1J

SURFACE MOUNT SUPERFAST RECTIFIER

VOLTAGE - 50 to 600 Volts CURRENT - 1.0 Ampere

FEATURES

l

For surface mounted applications

Low profile package

Built-in strain relief

Easy pick and place

Superfast recovery times for high efficiency

Plastic package has Underwriters Laboratory

SMA/DO-214AC

Flammability Classification 94V-O

Glass passivated junction

High temperature soldering:

260 /10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AC molded plastic

Terminals: Solder plated, solderable per MIL-STD-

750,

Method 2026

Polarity: Indicated by cathode band

Standard packaging: 12mm tape (EIA-481)

Weight: 0.002 ounce, 0.064 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase, half wave 60Hz resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOLS

ES1A ES1B ES1C ES1D ES1E ES1G ES1J UNITS

50

100

150

200

300

400

600

Volts

35

70

105

140

210

280

420

Volts

50

100

150

200

300

400

600

Volts

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current,

at T

L

=120

Peak Forward Surge Current 8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current T

A

=25

At Rated DC Blocking Voltage T

A

=100

Maximum Reverse Recovery Time (Note 1)

Typical Junction capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Operating and Storage Temperature Range

NOTES:

V

RRM

V

RMS

V

DC

I

(AV)

I

FSM

V

F

I

R

T

RR

C

J

R JL

T

J

,T

STG

1.0

30.0

0.95

5.0

100

35.0

10.0

35

-50 to +150

1.25

1.7

Amps

Volts

A

n

S

P

F

/W

1. Reverse Recovery Test Conditions: I

F

=0.5A, I

R

=1.0A, Irr=0.25A

ES1E Related Products

	ES1E	ES1A	ES1B	ES1C	ES1D	ES1G	ES1J
Description	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals	-	2	2	2	2	2	2
Number of components	-	1	1	1	1	1	1
Processing package description	-	Plastic, SMA, 2 PIN	GREEN, PLASTIC, SMA, 2 PIN	SMA, 2 PIN	Plastic, SMA, 2 PIN	Plastic, HSMA, 2 PIN	SMA, 2 PIN
state	-	ACTIVE	ACTIVE	ACTIVE	ACTIVE	DISCONTINUED	TRANSFERRED
packaging shape	-	Rectangle	Rectangle	RECTANGULAR	Rectangle	Rectangle	Rectangle
Package Size	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	-	Yes	Yes	Yes	Yes	Yes	Yes
Terminal form	-	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
Terminal location	-	pair	pair	DUAL	pair	pair	pair
Packaging Materials	-	Plastic/Epoxy	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	-	single	single	SINGLE	single	single	single
Diode component materials	-	silicon	silicon	SILICON	silicon	silicon	silicon
Diode type	-	Signal diode	Signal diode	SIGNAL DIODE	Signal diode	Signal diode	Signal diode
Maximum reverse recovery time	-	0.0200 us	0.0350 us	0.0150 us	0.0200 us	0.0600 us	0.0600 us
Maximum repetitive peak reverse voltage	-	50 V	100 V	150 V	200 V	400 V	600 V
Maximum average forward current	-	1 A	1 A	1 A	1 A	1 A	1 A
terminal coating	-	-	PURE Tin	MATTE TIN	PURE Tin	tin lead	NOT SPECIFIED

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