ES2G datasheet, PDF - EEWORLD Datasheet

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ES2G: Description2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC; Categorysemiconductor Discrete semiconductor; File Size202KB，3 Pages; ManufacturerMCC; Websitehttp://www.mccsemi.com

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ES2G Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC

ES2G Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	Plastic, HSMA, 2 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	C BEND
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Diode component materials	silicon
Diode type	rectifier diode
application	EFFICIENCY
Phase	1
Maximum reverse recovery time	0.0600 us
Maximum repetitive peak reverse voltage	400 V
Maximum average forward current	2 A
Maximum non-repetitive peak forward current	50 A

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MCC

omponents

21201 Itasca Street Chatsworth

!"#

$ % !"#

ES2A

THRU

ES2M

2 Amp Super Fast

Recovery

Silicon Rectifier

50 to 1000 Volts

DO-214AC

(SMAJ) (High Profile)

Cathode Band

•

Features

For

Mount Applications

Surface

Extremely Low Thermal Resistance

Easy Pick And Place

High Temp Soldering: 250°C for 10 Seconds At Terminals

Superfast Recovery Times For High Efficiency

•

Maximum Ratings

Operating Temperature: -50°C to +150°C

Storage Temperature: -50°C to +150°C

Maximum Thermal Resistance; 20°C/W Junction To Lead

MCC

Device

Maximum

Maximum Maximum

Catalog

Marking

Recurrent

RMS

Number

Peak Reverse

Voltage

Blocking

Voltage

ES2A

50V

35V

50V

ES2B

100V

70V

100V

ES2C

150V

105V

150V

ES2D

200V

140V

200V

ES2G

400V

280V

400V

ES2J

600V

420V

600V

ES2K

800V

560V

800V

ES2M

1000V

700V

1000V

Average Forward

Current

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

F(AV)

FSM

2.0A

50A

= 75°C

8.3ms, half sine

DIM

DIMENSIONS

INCHES

MIN

.078

.067

.002

---

.035

.065

.205

.160

.100

MAX

.116

.089

.008

.02

.055

.096

.224

.180

.112

MIN

1.98

1.70

.05

---

.89

1.65

5.21

4.06

2.57

MAX

2.95

2.25

.20

.51

1.40

2.45

5.69

4.57

2.84

NOTE

Electrical Characteristics @ 25°C Unless Otherwise Specified

ES2A-D

ES2G-K

ES2M

.975V

1.35V

1.60V

= 2.0A;

= 25°C*

= 25°C

= 100°C

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

Maximum Reverse

Recovery Time

SUGGESTED SOLDER

PAD LAYOUT

0.090”

5µA

150µA

0.085”

ES2A-D

ES2G-K

ES2M

50ns

60ns

100ns

Typical Junction

Capacitance

25pF

=0.5A, I

=1.0A,

=0.25A

Measured at

1.0MHz, V

=4.0V

0.070”

*Pulse test: Pulse width 200

µsec,

Duty cycle 2%

www.mccsemi.com

ES2G Related Products

	ES2G	ES2A	ES2B	ES2C	ES2D	ES2J	ES2K	ES2M
Description	2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AC	2 A, 50 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE	2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 800 V, SILICON, RECTIFIER DIODE	2 A, 1000 V, SILICON, RECTIFIER DIODE

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