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ES2C

Description
2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size202KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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ES2C Overview

2 A, 150 V, SILICON, RECTIFIER DIODE, DO-214AA




MCC
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
ES2A
THRU
ES2M
2 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAJ) (High Profile)
H
Cathode Band

Features
  


For
     
Mount Applications
 
Surface
 
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Maximum Ratings
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 20°C/W Junction To Lead
MCC
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak Reverse
Voltage
Blocking
Voltage
Voltage
ES2A
ES2A
50V
35V
50V
ES2B
ES2B
100V
70V
100V
ES2C
ES2C
150V
105V
150V
ES2D
ES2D
200V
140V
200V
ES2G
ES2G
400V
280V
400V
ES2J
ES2J
600V
420V
600V
ES2K
ES2K
800V
560V
800V
ES2M
ES2M
1000V
700V
1000V
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
I
F(AV)
I
FSM
2.0A
50A
T
J
= 75°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
J
J
A
E
F
G
DIMENSIONS
INCHES
MIN
.078
.067
.002
---
.035
.065
.205
.160
.100
MAX
.116
.089
.008
.02
.055
.096
.224
.180
.112
MM
MIN
1.98
1.70
.05
---
.89
1.65
5.21
4.06
2.57
MAX
2.95
2.25
.20
.51
1.40
2.45
5.69
4.57
2.84
NOTE
C
D
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
ES2A-D
ES2G-K
ES2M
V
F
.975V
1.35V
1.60V
I
FM
= 2.0A;
T
J
= 25°C*
T
J
= 25°C
T
J
= 100°C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
SUGGESTED SOLDER
PAD LAYOUT
0.090”
I
R
5µA
150µA
0.085”
ES2A-D
ES2G-K
ES2M
T
rr
C
J
50ns
60ns
100ns
Typical Junction
Capacitance
25pF
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
0.070”
*Pulse test: Pulse width 200
µsec,
Duty cycle 2%
www.mccsemi.com

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ES2C ES2A ES2B ES2D ES2G ES2J ES2K ES2M
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