ISP814X, ISP824X, ISP844X
ISP814, ISP824, ISP844
HIGH DENSITY A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 approval pending
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ISP814X
ISP814
2.54
7.0
6.0
1.2
5.08
4.08
1
2
Dimensions in mm
4
3
ISP814X - Certified to EN60950 by the
following Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
ISP824X, ISP844X - EN60950 pending
ISP824X
ISP824
7.62
4.0
3.0
0.5
13°
Max
0.26
3.0
0.5
2.54
1
7.0
6.0
1.2
10.16
9.16
4.0
3.0
0.5
3.0
0.5
3.35
2
3
4
3.35
DESCRIPTION
The ISP814, ISP824, ISP844 series of optically
coupled isolators consist of two infrared light
emitting diodes connected in inverse parallel
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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AC or polarity insensitive input
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Telephone sets, Telephone exchangers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
8
7
6
5
7.62
13°
Max
0.26
1
16
15
14
13
12
11
10
9
7.62
ISP844X
ISP844
2.54
2
3
4
5
7.0
6.0 6
7
8
20.32
19.32
4.0
3.0
0.5
7.62
1.2
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
3.0
0.5 3.35
13°
Max
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
3/11/99
DB91070M-AAS/ A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Power Dissipation
± 50mA
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Emitter-collector Voltage BV
ECO
Power Dissipation
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( T
A
= 25°C Unless otherwise noted )
PARAMETER
Input
Forward Voltage (V
F
)
MIN TYP MAX UNITS
1.2
1.4
V
TEST CONDITION
I
F
= ± 20mA
35V
6V
150mW
Output
Collector-emitter Breakdown (BV
CEO
)
( Note 2 )
35
6
100
V
V
nA
I
C
= 1mA
I
E
= 100
µ
A
V
CE
= 20V
± 1mAI
F
, 5V V
CE
± 20mAI
F
, 1mAI
C
See note 1
See note 1
V
IO
= 500V (note 1)
V
CE
= 2V ,
I
C
= 10mA, R
L
= 100
Ω
Emitter-collector Breakdown (BV
ECO
)
Collector-emitter Dark Current (I
CEO
)
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP814, ISP824, ISP844
ISP814A, ISP824A, ISP844A
Collector-emitter Saturation VoltageV
CE (SAT)
Input to Output Isolation Voltage V
ISO
20
50
300
150
0.2
%
%
V
5300
7500
V
RMS
V
PK
Ω
Input-output Isolation Resistance R
ISO
5x10
10
Output Rise Time
Output Fall Time
tr
tf
4
3
18
18
µ
s
µ
s
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
3/11/99
DB91070M-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
CE(SAT)
=1mA
2mA
3mA
5mA
Collector power dissipation P
C
(mW)
6
5
4
3
2
1
0
8mA
200
(V)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector-emitter saturation voltage V
150
100
50
0
-30
0
25
50
75
100
125
Ambient temperature T
A
( °C )
Forward Current vs. Ambient Temperature
60
0
Ic
T
A
= 25°C
5
10
15
Forward current I
F
(±mA)
Collector Current vs. Collector-emitter Voltage
50
T
A
= 25°C
±50
±30
±20
±15
20
10
0
±10
I
F
= ±5mA
Forward current I
F
(±mA)
50
Collector current I
C
(mA)
-30
0
25
50
75
100
125
40
30
40
30
20
10
0
Ambient temperature T
A
( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
I
F
= ±20mA
I
C
= 1mA
Current transfer ratio CTR (%)
0.12
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature T
A
( °C )
0
2
4
6
8
10
Collector-emitter voltage V
CE
( V )
Current Transfer Ratio vs. Forward Current
320
280
240
200
160
120
80
40
0
1
2
5
10
20
50
Forward current I
F
(±mA)
DB91070M-AAS/A1
Collector-emitter saturation voltage V
CE(SAT)
(V)
V
CE
= 5V
T
A
= 25°C
3/11/99
Microcontroller MCU
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