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MTP4N10

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size154KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MTP4N10 Overview

POWER, FET

MTP4N10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

MTP4N10 Related Products

MTP4N10 MTP4N08 IRF510 IRF510-513 IRF511 IRF512 IRF513
Description POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible incompatible
Reach Compliance Code compli compli unknow - compli compli compli
Configuration Single Single SINGLE WITH BUILT-IN DIODE - Single Single Single
Maximum drain current (Abs) (ID) 4 A 4 A 4 A - 5.6 A 4.9 A 4.9 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 - e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 20 W - 43 W 43 W 43 W
surface mount NO NO NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maker - Fairchild Fairchild - Fairchild Fairchild Fairchild
Maximum drain current (ID) - 4 A 5.6 A - 5.6 A 4.9 A 4.9 A
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