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MTP4N08

Description
POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size154KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

MTP4N08 Overview

POWER, FET

MTP4N08 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)4 A
Maximum drain current (ID)4 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

MTP4N08 Related Products

MTP4N08 MTP4N10 IRF510 IRF510-513 IRF511 IRF512 IRF513
Description POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET POWER, FET
Is it Rohs certified? incompatible incompatible incompatible - incompatible incompatible incompatible
Maker Fairchild - Fairchild - Fairchild Fairchild Fairchild
Reach Compliance Code compli compli unknow - compli compli compli
Configuration Single Single SINGLE WITH BUILT-IN DIODE - Single Single Single
Maximum drain current (Abs) (ID) 4 A 4 A 4 A - 5.6 A 4.9 A 4.9 A
Maximum drain current (ID) 4 A - 5.6 A - 5.6 A 4.9 A 4.9 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0 e0 - e0 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 20 W - 43 W 43 W 43 W
surface mount NO NO NO - NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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