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IRFM360PBF

Description
Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size248KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRFM360PBF Overview

Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

IRFM360PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)980 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.23 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power consumption environment250 W
Maximum pulsed drain current (IDM)92 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)219 ns
Maximum opening time (tons)173 ns
Base Number Matches1
PD-90712C
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRFM360
IRFM360
400V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
®
R
DS(on)
0.20
I
D
23A
HEXFET
®
MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The
HEXFET
transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical)
23
14
92
250
2.0
±20
980
23
25
4.0
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
Units
A
www.irf.com
1
05/12/15

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IRFM360PBF IRFM360UPBF IRFM360DPBF
Description Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA Power Field-Effect Transistor, 23A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Is it lead-free? Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, R-MSFM-P3 FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code compliant compliant compliant
Avalanche Energy Efficiency Rating (Eas) 980 mJ 980 mJ 980 mJ
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 400 V
Maximum drain current (ID) 23 A 23 A 23 A
Maximum drain-source on-resistance 0.23 Ω 0.23 Ω 0.23 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 R-MSFM-P3 R-MSFM-P3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material METAL METAL METAL
Package shape SQUARE RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 260
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 250 W 250 W 250 W
Maximum pulsed drain current (IDM) 92 A 92 A 92 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 40 40 40
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum off time (toff) 219 ns 219 ns 219 ns
Maximum opening time (tons) 173 ns 173 ns 173 ns
Base Number Matches 1 1 1
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