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40EPF02

Description
40 A, 200 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size92KB,6 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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40EPF02 Overview

40 A, 200 V, SILICON, RECTIFIER DIODE

40EPF02 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-247AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
applicationFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-T2
JESD-609 codee0
Maximum non-repetitive peak forward current475 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.18 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin I2129 rev. A 06/98
QUIET
IR
Series
40EPF.. HV
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
t
rr
Description/Features
The 40EPF.. fast soft recovery
QUIET
IR
rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
< 1.25V @ 20A
= 95 ns
V
RRM
1000 to 1200V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
I
FSM
V
F
trr
T
J
@ 20 A, T
J
= 25°C
@ 1A, - 100A/µs
Package Outline
Units
A
V
A
V
ns
40EPF..
40
1000 to 1200
475
1.25
95
- 40 to 150
TO-247AC (Modified)
°C
1

40EPF02 Related Products

40EPF02 40EPF 40EPF04 40EPF10 40EPF10HV 40EPF12 40EPF12HV
Description 40 A, 200 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE 40 A, 400 V, SILICON, RECTIFIER DIODE 40 A, 1000 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE 40 A, 1200 V, SILICON, RECTIFIER DIODE 40 A, 200 V, SILICON, RECTIFIER DIODE
Is it Rohs certified? incompatible - incompatible incompatible - incompatible -
Maker International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) -
Parts packaging code TO-247AC - TO-247AC TO-247AC - TO-247AC -
package instruction R-PSFM-T2 - R-PSFM-T2 R-PSFM-T2 - R-PSFM-T2 -
Contacts 3 - 3 2 - 2 -
Reach Compliance Code compliant - compliant compliant - compliant -
application FAST SOFT RECOVERY - FAST SOFT RECOVERY FAST RECOVERY - FAST SOFT RECOVERY -
Shell connection CATHODE - CATHODE CATHODE - CATHODE -
Configuration SINGLE - SINGLE SINGLE - SINGLE -
Diode component materials SILICON - SILICON SILICON - SILICON -
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE -
Maximum forward voltage (VF) 1 V - 1 V 1.4 V - 1.4 V -
JESD-30 code R-PSFM-T2 - R-PSFM-T2 R-PSFM-T2 - R-PSFM-T2 -
JESD-609 code e0 - e0 e0 - e0 -
Maximum non-repetitive peak forward current 475 A - 475 A 475 A - 475 A -
Number of components 1 - 1 1 - 1 -
Phase 1 - 1 1 - 1 -
Number of terminals 2 - 2 2 - 2 -
Maximum operating temperature 150 °C - 150 °C 150 °C - 150 °C -
Maximum output current 40 A - 40 A 40 A - 40 A -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR -
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT -
Peak Reflow Temperature (Celsius) 225 - 225 225 - 225 -
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified -
Maximum repetitive peak reverse voltage 200 V - 400 V 1000 V - 1200 V -
Maximum reverse recovery time 0.18 µs - 0.18 µs 0.41 µs - 0.45 µs -
surface mount NO - NO NO - NO -
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) -
Terminal form THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE -
Terminal location SINGLE - SINGLE SINGLE - SINGLE -
Maximum time at peak reflow temperature 30 - 30 30 - 30 -
Base Number Matches 1 - 1 1 - 1 -
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