ESM4120
ESM4120
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4141-3.4
DS4141-4.0 January 2000
APPLICATIONS
s
Induction Heating
s
A.C. Motor Drives
s
Inverters And Choppers
s
Welding
s
High Frequency Rectification
s
UPS
KEY PARAMETERS
V
RRM
1000V
I
F(AV)
334A
I
FSM
4000A
Q
r
15
µ
C
t
rr
0.8
µ
s
FEATURES
s
Double Side Cooling
s
High Surge Capability
s
Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
V
RRM
V
1000
800
600
Conditions
ESM4120 10
ESM4120 08
ESM4120 06
V
RSM
= V
RRM
+ 100V
Outline type code: M771.
See Package Details for further information.
CURRENT RATINGS
Symbol
Double Side Cooled
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
334
565
490
A
A
A
Parameter
Conditions
Max.
Units
Single Side Cooled (Anode side)
I
F(AV)
I
F(RMS)
I
F
Mean forward current
RMS value
Continuous (direct) forward current
Half wave resistive load, T
case
= 65
o
C
T
case
= 65
o
C
T
case
= 65
o
C
210
360
290
A
A
A
1/8
ESM4120
SURGE RATINGS
Symbol
I
FSM
It
I
FSM
It
2
2
Parameter
Surge (non-repetitive) forward current
Conditions
Max.
4.5
Units
kA
A
2
s
kA
A
2
s
10ms half sine; with 0% V
RRM,
T
j
= 125 C
I t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% V
RRM,
T
j
= 125 C
I t for fusing
2
o
2
o
101 x 10
3
3.6
64.8 x 10
3
THERMAL AND MECHANICAL DATA
Symbol
Parameter
Conditions
Double side cooled
R
th(j-c)
Thermal resistance - junction to case
Single side cooled
Cathode dc
Clamping force 3.5kN
with mounting compound
On-state (conducting)
Double side
Single side
-
-
-
-
-55
3.0
0.147
0.02
0.04
125
125
4.0
o
Min.
dc
Anode dc
-
-
Max.
0.07
0.133
Units
o
C/W
o
C/W
C/W
C/W
C/W
o
o
R
th(c-h)
Thermal resistance - case to heatsink
o
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Clamping force
C
C
o
kN
2/8
ESM4120
CHARACTERISTICS
Symbol
V
FM
I
RRM
t
rr
Q
RA1
I
RM
K
V
TO
r
T
V
FRM
Forward voltage
Peak reverse current
Reverse recovery time
Recovered charge (50% chord)
Reverse recovery current
Soft factor
Threshold voltage
Slope resistance
Forward recovery voltage
At T
vj
= 125
o
C
At T
vj
= 125
o
C
di/dt = 1000A/µs, T
j
= 125
o
C
I
F
= 200A, di
RR
/dt = 50A/µs
T
case
= 125
o
C, V
R
= 100V
Parameter
Conditions
At 450A peak, T
case
= 25
o
C
At V
RRM
, T
case
= 125
o
C
Typ.
-
-
0.8
-
-
-
-
-
-
Max.
1.7
100
-
15
34
-
1.25
1.0
25
Units
V
mA
µs
µC
A
-
V
mΩ
V
DEFINITION OF K FACTOR AND Q
RA1
Q
RA1
= 0.5x I
RR
(t
1
+ t
2
)
dI
R
/dt
0.5x I
RR
I
RR
t
1
t
2
k = t
1
/t
2
τ
3/8
ESM4120
CURVES
1000
Measured under pulse conditions
900
Instantaneous forward current I
F
- (A)
800
700
T
j
= 125˚C
T
j
= 25˚C
600
500
1.25
1.5
1.75
2.0
2.25
Instantaneous forward voltage V
F
- (V)
Fig.1 Maximum (limit) forward characteristics
500
Measured under pulse conditions
400
Instantaneous forward current I
F
- (A)
300
T
j
= 125˚C
200
T
j
= 25˚C
100
0
1.0
1.2
1.4
1.6
1.8
Instantaneous forward voltage V
F
- (V)
4/8
Fig.2 Maximum (limit) forward characteristics
ESM4120
1000
I
F
Q
S
=
∫
50µs
0
Conditions:
T
j
= 125 ˚C,
QS
V
R
= 100V
Reverse recovered charge Q
S
- (µC)
100
t
p
= 1ms
dI
R
/dt
I
RR
I
F
= 1000A
I
F
= 500A
I
F
= 200A
10
I
F
= 100A
1
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
Fig.3 Recovered charge
1000
1000
Conditions:
T
j
= 125˚C,
V
R
= 100V
Reverse recovery current I
RR
- (A)
100
I
F
= 1000A
10
1
1
10
100
Rate of rise of reverse current dI
R
/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of forward current
5/8
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