A Business Partner of Renesas Electronics Corporation.
PS2911-1
HIGH CTR, 4-PIN ULTRA SMALL PACKAGE FLAT-LEAD PHOTOCOUPLER
R08DS0110EJ0300
Rev.3.00
May 24, 2013
Data Sheet
DESCRIPTION
The PS2911-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor in one package for high density mounting applications.
An ultra small flat-lead package has been provided which realizes a reduction in mounting area of about 30% compared
with the PS28xx series.
FEATURES
•
•
•
•
•
Ultra small flat-lead package (4.6 (L)
×
2.5 (W)
×
2.1 (H) mm)
High current transfer ratio (CTR = 200% TYP. @ I
F
= 1 mA, V
CE
= 5 V)
High isolation voltage (BV = 2 500 Vr.m.s.)
Ordering number of taping product: PS2911-1-F3: 3 500 pcs/reel
Safety standards
•
UL approved: No. E72422
•
BSI approved (BS EN 60065, BS EN 60950)
•
DIN EN 60747-5-5 (VDE 0884-5) approved (Option)
PIN CONNECTION
(Top View)
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
<R>
APPLICATIONS
•
•
DC/DC converter
Modem/PC card
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 1 of 12
A Business Partner of Renesas Electronics Corporation.
PS2911-1e
<R>
PACKAGE DIMENSIONS (UNIT: mm)
2.5±0.3
4
3
R
1
2
5.0±0.2
2.1 MAX.
0.4±0.1
1.27
0.15
+0.1
–0.05
0.2±0.1
<R>
MARKING EXAMPLE
Ni/Pd/Au
PLATING
Last number of
type No. : 11
11
R
*1
Company initial
(Engraved R)
601
No. 1 pin
mark
(Nicked
corner)
Assembly lot
3 01
Week assembled
Year Assembled
(Last 1 Digit)
*1
Bar
: Pb-Free
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Creepage Distance
Isolation Distance
MIN.
4 mm
4 mm
0.4 mm
R08DS0110EJ0300 Rev.3.00
May 24, 2013
4.1 MIN.
4.6±0.2
Page 2 of 12
A Business Partner of Renesas Electronics Corporation.
PS2911-1e
<R>
ORDERING INFORMATION
Part Number
Order Number
Solder Plating
Specification
Pb-Free
(Ni/Pd/Au)
Packing Style
Safety Standard
Approval
Standard products
(UL, BSI approved)
DIN EN 60747-5-5
(VDE 0884-5)
Approved (Option)
Application
Part
*1
Number
PS2911-1
PS2911-1
PS2911-1-F3
PS2911-1-AX
PS2911-1-F3-
AX
PS2911-1-V-AX
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500
pcs/reel
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500
pcs/reel
PS2911-1-V
PS2911-1-V-F3 PS2911-1-V-F3-
AX
Note:
*1. For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, unless otherwise specified)
Diode
Parameter
Forward Current
Forward Current Derating
Peak Forward Current
*1
Symbol
I
F
Δ
I
F
/°C
I
FP
P
D
V
R
V
CEO
V
ECO
I
C
Δ
P
C
/°C
P
C
BV
P
T
T
A
T
stg
Ratings
50
0.5
0.5
60
6
40
5
40
1.2
120
2 500
160
−55
to +100
−55
to +150
Unit
mA
mA/°C
A
mW
V
V
V
mA
mW/°C
mW
Vr.m.s.
mW
°C
°C
Detector
Power Dissipation
Reverse Voltage
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
Isolation Voltage
*2
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Notes: *1. PW = 100
μ
s, Duty Cycle = 1%
*2. AC voltage for 1 minute at T
A
= 25°C, RH = 60% between input and output.
Pins 1-2 shorted together, 3-4 shorted together.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 3 of 12
A Business Partner of Renesas Electronics Corporation.
PS2911-1e
<R>
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Diode
Parameter
Forward Voltage
Reverse Current
Terminal Capacitance
Collector to Emitter Dark
Current
Current Transfer Ratio
*1
(I
C
/I
F
)
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
*2
*2
*2
*2
Transistor
Coupled
Symbol
Conditions
V
F
I
F
= 1 mA
I
R
V
R
= 5 V
C
t
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 40 V
I
CEO
CTR
V
CE(SAT)
R
I-O
C
I-O
t
r
t
f
t
on
t
s
t
off
V
CC
= 5 V, I
F
= 1 mA, R
L
= 5 kΩ
I
F
= 1 mA, V
CE
= 5 V
I
F
= 1 mA, I
C
= 0.2 mA
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
MIN.
0.9
TYP.
1.1
15
MAX.
1.3
5
100
Unit
V
μ
A
pF
nA
%
V
Ω
pF
100
200
0.13
400
0.3
10
11
0.4
5
10
40
10
120
μ
s
μ
s
Turn-on Time
Storage Time
Turn-off Time
Notes: *1. CTR rank
N : 100 to 400 (%)
K : 200 to 400 (%)
L : 150 to 300 (%)
M : 100 to 200 (%)
*2. Test circuit for switching time
Pulse Input
PW = 100
μ
s
Duty cycle = 1/10
I
F
In monitor
50
Ω
I
C
V
CC
Input
t
on
t
d
t
s
90%
t
off
V
OUT
R
L
= 100
Ω/5
kΩ
Output
t
r
t
f
10%
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 4 of 12
A Business Partner of Renesas Electronics Corporation.
PS2911-1e
<R>
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
MAXIMUM FORWARD CURRENT vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
80
140
120
100
80
60
40
20
0
25
50
75
100
125
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Maximum Forward Current I
F
(mA)
60
40
0.5 mA/˚C
20
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
20
18
CTR = 200%
I
F
= 5 mA
10
T
A
= +100˚C
+60˚C
+25˚C
Collector Current I
C
(mA)
Forward Current I
F
(mA)
16
14
12
10
8
6
4
2
1
0˚C
–25˚C
–50˚C
2 mA
1 mA
0.5 mA
2
4
6
8
10
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
10 000
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
10
CTR = 200%
5 mA
2 mA
1 000
V
CE
= 20 V
40 V
100
Collector Current I
C
(mA)
1 mA
1
I
F
= 0.5 mA
10
1
–25
0
25
50
75
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Remark
The graphs indicate nominal characteristics.
R08DS0110EJ0300 Rev.3.00
May 24, 2013
Page 5 of 12
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