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BPV11F

Description
Infrared Emitters 10 Degree 40mW
CategoryLED optoelectronic/LED   
File Size119KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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Infrared Emitters 10 Degree 40mW

BPV11F Parametric

Parameter NameAttribute value
Product CategoryPhototransistors
ManufacturerVishay
RoHSDetails
ProductPhototransistors
Package / CaseT-1 3/4
Mounting StyleThrough Hole
Peak Wavelength930 nm
Operating Supply Voltage5 V
Maximum On-State Collector Current50 mA
Collector- Emitter Voltage VCEO Max70 V
Dark Current50 nA
Pd - Power Dissipation150 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
Collector-Emitter Breakdown Voltage70 V
Collector-Emitter Saturation Voltage130 mV
Half Intensity Angle Degrees15 deg
Height8.6 mm
Length5.75 mm
Lens Color/StyleWater Clear
Light Current9 mA
PackagingTube
Factory Pack Quantity2000
TypePhototransistor
Wavelength930 nm
Width5.75 mm
Unit Weight0.014110 oz
BPV11F
Vishay Semiconductors
Silicon NPN Phototransistor
Description
BPV11F is a very high sensitive silicon NPN epitaxial
planar phototransistor in a standard T-1¾ plastic
package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters (λ
p
900 nm).
The viewing angle of ± 15° makes it insensible to
ambient straylight.
A base terminal is available to enable biasing and
sensitivity control.
12784
Features
Very high radiant sensitivity
Standard T-1¾ (∅ 5 mm) package
IR filter for GaAs emitters (950 nm)
e4
Angle of half sensitivity
ϕ
= ± 15°
Base terminal available
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Detector for industrial electronic circuitry, mea-
surement and control
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector current
Collector peak current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
t
5 s, 2 mm from body
t
p
/T = 0.5, t
p
10 ms
T
amb
47 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
80
70
5
50
100
150
100
- 55 to + 100
260
350
Unit
V
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81505
Rev. 1.5, 13-Nov-06
www.vishay.com
1
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