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SIM-22STF

Description
Infrared Emitters SIDE VIEW IR EMITTER
CategoryLED optoelectronic/LED   
File Size91KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
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Infrared Emitters SIDE VIEW IR EMITTER

SIM-22STF Parametric

Parameter NameAttribute value
Product CategoryInfrared Emitters
ManufacturerROHM Semiconductor
RoHSDetails
Wavelength950 nm
Radiant Intensity0.8 mW/sr
Beam Angle60 deg
If - Forward Current50 mA
Vf - Forward Voltage1.3 V
Power Rating80 mW
Maximum Operating Temperature+ 85 C
Minimum Operating Temperature- 25 C
Package / CaseSide Looker
PackagingBulk
Fall Time1 us
Illumination ColorInfrared
Lens ShapeDome
Mounting StyleThrough Hole
Rise Time1 us
Factory Pack Quantity2000
Viewing Angle60 deg
Infrared light emitting diode, side-view type
SIM-22ST
The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with
1.5
lens.
Applications
Light source for sensors
Features
1) Compact package (4.7x4.6 mm) with lens.
2) High efficiency, high output.
3) Emission spectrum well suited to silicon detectors
(
P
= 950 nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Dimensions
(Unit : mm)
2.54
±
0.1
Notes:
1.
Tolerances are
±
0.2 unless
otherwise indicated.
2. Value in parenthese is size
at base of leads.
1.0
4.1
Gate remainder
0.3Max.
4.6
±
0.1
1.8
±
0.05
1.9
0.15
R0.5
R0.75
2-C0.7
1.5
4.7
±
0.1
2.8
2−0.65
2−0.45
R0.5
1
(2.54)
2
0.64
1 Cathode
12Min.
1.0
0.40
2 Anode
Absolute
maximum ratings
(Ta=25C)
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I
F
V
R
P
D
I
FP
Topr
Tstg
Limits
50
5
80
0.5
−25
to +85
−30
to +100
Unit
mA
V
mW
A
°C
°C
Pulse width = 0.1ms, duty ratio 1%
Electrical
and optical characteristics
(Ta=25C)
Parameter
Emitting strength
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Response time
Cut-off frequency
Symbol
I
E
I
E
V
F
I
R
λ
P
Δλ
θ
1/2
tr
fc
tf
Min.
0.48
Typ.
0.8
1.3
1.3
950
40
Max.
1.94
1.6
10
Unit
mW/sr
mA
V
μA
nm
nm
deg
μs
MHz
I
F
=10mA
I
F
=10mA
I
F
=50mA
V
R
=5V
I
F
=10mA
I
F
=20mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Conditions
±
30
1.0
1.0
According to our measurement procedures.
www.rohm.com
c
2010 ROHM Co., Ltd. All rights reserved.
1/2
2010.06 - Rev.B

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