INFRARED EMITTING DIODE
Part Number: KM2520SF4C03
Features
SUBMINIA TURE PACKAGE.
MECHANICALLY AND SPECTRALLY MATCHED TO
THE PHOTOTRANSISTOR.
GULL WING LEAD.
LONG LIFE - SOLID STATE RELIABILITY.
LOW PACKAGE PROFILE.
PACKAGE : 1000PCS / REEL.
MOISTURE SENSITIVITY LEVEL : LEVEL 3.
RoHS COMPLIANT.
Description
SF4 Made with Gallium Aluminum Arsenide Infrared Emit-
ting diodes.
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is ±0.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the leads emerge from the package.
4. Specifications are subject to change without notice.
5. The device has a single mounting surface. The device must be mounted according to the specifications.
SPEC NO: DSAA5017
APPROVED: WYNEC
REV NO: V.7
CHECKED: Allen Liu
DATE: AUG/09/2007
DRAWN: Y.L.LI
PAGE: 1 OF 4
ERP: 1202000624
Selection Guide
Part No.
Dice
Lens Type
Po (mW/sr) [2]
@ 20mA *50mA
Min.
KM2520SF4C03
SF4 (GaAIAs)
WATER CLEAR
1.6
*2.6
Notes:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
2. * Luminous intensity with asterisk is measured at 50mA;Radiant Intensity/ luminous flux: +/-15%.
Viewing
Angle [1]
2θ1/2
20
°
Typ.
4
*8
Electrical / Optical Characteristics at TA=25°C
Parameter
Forward Voltage [1]
Reverse Current
Capacitance
Peak Spectral Wavelength
Spectral Bandwidth
Note:
1. Forward Voltage: +/-0.1V.
P/N
SF4
SF4
SF4
SF4
SF4
Symbol
V
F
I
R
C
λP
Δλ1/2
Typ.
1.3
Max.
1.6
10
Units
V
uA
pF
nm
nm
Test Conditions
I
F
=20mA
V
R
= 5V
V
F
=0V;f=1MHz
I
F
=20mA
I
F
=20mA
90
880
50
Absolute Maximum Ratings at TA=25°C
Parameter
Power dissipation
DC Forward Current
Peak Forward Current [1]
Reverse Voltage
Operating Temperature
Storage Temperature
Note:
1. 1/100 Duty Cycle, 10μs Pulse Width.
Symbol
P
T
I
F
i
FS
V
R
T
A
T
STG
SF4
80
50
1.2
5
-40 To +85
-40 To +85
Units
mW
mA
A
V
°C
°C
SPEC NO: DSAA5017
APPROVED: WYNEC
REV NO: V.7
CHECKED: Allen Liu
DATE: AUG/09/2007
DRAWN: Y.L.LI
PAGE: 2 OF 4
ERP: 1202000624