BTS113AE3045A datasheet, PDF - EEWORLD Datasheet

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BTS113AE3045A: DescriptionPower Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size539KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BTS113AE3045A Overview

Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220ABSMD VERSION, 3 PIN

BTS113AE3045A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Infineon
Parts packaging code	TO-220AB
package instruction	TO-220ABSMD VERSION, 3 PIN
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	11.5 A
Maximum drain current (ID)	11.5 A
Maximum drain-source on-resistance	0.17 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	46 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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TEMPFET

BTS 113 A

Features

N channel

Logic level

Enhancement mode

Temperature sensor with thyristor characteristic

The drain pin is electrically shorted to the tab

Type

BTS 113A

60 V

11.5 A

DS(on)

0.17

Ω

Package

TO-220AB

Ordering Code

C67078-S5015-A2

Maximum Ratings

Parameter

Drain-source voltage

Drain-gate voltage,

= 20 kΩ

Gate-source voltage

Continuous drain current,

= 25

°C

ISO drain current

= 85 ˚C,

= 10 V,

= 0.5 V

Pulsed drain current,

Short circuit current,

Symbol

Values

11.5

2.2

400

– 55 ... + 150

55/150/56

K/W

≤

3.1

≤

°C

–

Unit

DGR

D-ISO

D puls

SCmax

tot

stg

–

= 25

°C

= – 55 ... + 150

°C

Short circuit dissipation,

= – 55 ... + 150

°C

Power dissipation

Operating and storage temperature range

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

Thermal resistance

Chip-case

Chip-ambient

th JC

th JA

19.02.04

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