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TG2206F

Description
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
CategoryWireless rf/communication    Radio frequency and microwave   
File Size174KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TG2206F Overview

TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic

TG2206F Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)30 dBm
Maximum insertion loss0.7 dB
Maximum operating frequency1000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesDIVERSITY SWITCH
TG2206F
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2206F
RF SPDT Swith
Switch The Receive Filter for Mobile Communication
Switch The Diversity Antenna
Switch The Local Signal
Features
l
Low insertion loss: L
OSS
= 0.4dB (typ.)
l
Hight isolation: ISL = 28dB (typ.)
l
Low voltage operation: V
C
= 0 V/2.5 V
l
Small package: SM6 package (2.9 × 1.6 × 1.1 mm)
Pin Assignment
(top view)
Marking
Weight: 0.014 g (typ.)
Maximum Ratings
(Ta = 25
°
C)
Characteristic
Control voltage
Input power
Operating temperature range
Storage temperature range
Symbol
V
C1
V
C2
P
i
T
opr
T
stg
Rating
5
5
1
−40~85
−55~125
Unit
V
V
W
°C
°C
Caution
This device is electrostatic sensitivity. Please handle with caution.
1
2002-07-31
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