E2G1047-18-25
¡ Semiconductor
MSM56V16800D/DH
¡ Semiconductor
This
MSM56V16800D/DH
version: Mar. 1998
Pr
el
im
in
ar
y
2-Bank
¥
1,048,576-Word
¥
8-Bit SYNCHRONOUS DYNAMIC RAM
DESCRIPTION
The MSM56V16800D/DH is a 2-bank
¥
1,048,576-word
¥
8-bit synchronous dynamic RAM,
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
inputs and outputs are LVTTL compatible.
FEATURES
•
•
•
•
•
•
•
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
2-bank
¥
1,048,576-word
¥
8-bit configuration
3.3 V power supply,
±0.3
V tolerance
Input
: LVTTL compatible
Output : LVTTL compatible
Refresh : 4096 cycles/64 ms
Programmable data transfer mode
–
CAS
latency (1, 2, 3)
–
CAS
latency (2, 3)*
1
– Burst length (1, 2, 4, 8, full page)
– Burst length (1, 2, 4, 8)*
1
– Data scramble (sequential, interleave)
*
1
: H version only.
• CBR auto-refresh, Self-refresh capability
• Package:
44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K)
(Product : MSM56V16800D/DH-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM56V16800D-10
MSM56V16800D-12
MSM56V16800DH-15
Max.
Frequency
100 MHz
83 MHz
66 MHz
Access Time (Max.)
t
AC2
9 ns
14 ns
9 ns
t
AC3
9 ns
10 ns
9 ns
1/30
¡ Semiconductor
PIN CONFIGURATION (TOP VIEW)
MSM56V16800D/DH
V
CC
DQ1
V
SS
Q
DQ2
V
CC
Q
DQ3
V
SS
Q
DQ4
V
CC
Q
NC
NC
WE
CAS
RAS
CS
A11
A10
A0
A1
A2
A3
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
DQM
DQi
V
CC
V
SS
V
CC
Q
V
SS
Q
NC
44
V
SS
43
DQ8
42
V
SS
Q
41
DQ7
40
V
CC
Q
39
DQ6
38
V
SS
Q
37
DQ5
36
V
CC
Q
35
NC
34
NC
33
DQM
32
CLK
31
CKE
30
NC
29
A9
28
A8
27
A7
26
A6
25
A5
24
A4
23
V
SS
44-Pin Plastic TSOP (II)
(K Type)
Pin Name
CLK
CS
CKE
A0 - A10
A11
RAS
CAS
WE
Function
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Pin Name
Function
Data Input/Output Mask
Data Input/Output
Power Supply (3.3 V)
Ground (0 V)
Data Output Power Supply (3.3 V)
Data Output Ground (0 V)
No Connection
Note:
The same power supply voltage must be provided to every V
CC
pin and V
CC
Q pin.
The same GND voltage level must be provided to every V
SS
pin and V
SS
Q pin.
2/30
¡ Semiconductor
MSM56V16800D/DH
PIN DESCRIPTION
CLK
CS
CKE
Fetches all inputs at the "H" edge.
Disables or enables device operation by asserting or deactivating all inputs except CLK, CKE and DQM.
Masks system clock to deactivate the subsequent CLK operation.
If CKE is deactivated, system clock will be masked so that the subsequent CLK operation is
deactivated. CKE should be asserted at least one cycle prior to a new command.
Address
Row & column multiplexed.
Row address: RA0 – RA10
Column address: CA0 – CA8
A11
RAS
CAS
WE
DQM
DQi
Masks the read data of two clocks later when DQM is set "H" at the "H" edge of the clock signal.
Masks the write data of the same clock when DQM is set "H" at the "H" edge of the clock signal.
Data inputs/outputs are multiplexed on the same pin.
Functionality depends on the combination. For details, see the function truth table.
Selects bank to be activated during row address latch time and selects bank for precharge and read/
write during column address latch time. A11 = "L" : Bank A, A11 = "H" : Bank B
3/30
¡ Semiconductor
BLOCK DIAGRAM
MSM56V16800D/DH
CKE
CLK
CS
RAS
CAS
WE
DQM
Timing
Register
Program-
ming
Register
Latency
& Burst
Controller
I/O
Controller
Bank
Controller
A11
A0 -
A11
Internal
Col.
Address
Counter
Input
Data
Register
9
Input
Buffers
8
8
9
Column
Address
Buffers
Column Decoders
Sense Amplifier
Internal
Row
Address
Counter
8
Read
Data
Register
8
8
Output
Buffers
DQ1 -
DQ8
Row
Decoders
Word
Drivers
8Mb
Memory
Cells
8Mb
Memory
Cells
12
Row
Address
Buffers
12
Row
Decoders
Word
Drivers
Sense Amplifier
Column Decoders
4/30
¡ Semiconductor
MSM56V16800D/DH
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Voltages referenced to V
SS
)
Parameter
Voltage on Any Pin Relative to V
SS
V
CC
Supply Voltage
Storage Temperature
Power Dissipation
Short Circuit Current
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
, V
CC
Q
T
stg
P
D
*
I
OS
T
opr
Rating
–0.5 to V
CC
+ 0.5
–0.5 to 4.6
–55 to 150
600
50
0 to 70
Unit
V
V
°C
mW
mA
°C
*: Ta = 25°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
, V
CC
Q
V
IH
V
IL
Min.
3.0
2.0
–0.3
Typ.
3.3
—
—
(Voltages referenced to V
SS
= 0 V)
Max.
3.6
V
CC
+ 0.2
0.8
Unit
V
V
V
Capacitance
(V
CC
= 3.3 V ±0.3 V, Ta = 25°C, f = 1 MHz)
Parameter
Input Capacitance (A0 - A11)
Input Capacitance (CLK, CKE,
CS,
RAS, CAS, WE,
DQM)
Input/Output Capacitance
(DQ1 - DQ8)
Symbol
C
IN1
C
IN2
C
OUT
Min.
2
2
2
Max.
5
5
7
Unit
pF
pF
pF
5/30
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