E2L0049-17-Y1
¡ Semiconductor
¡ Semiconductor
MSM5416125A
DESCRIPTION
This version: Jan. 1998
MSM5416125A
Previous version: Dec. 1996
131,072-Word
¥
16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
The OKI MSM5416125A is a 128K-word
¥
16-bit dynamic RAM fabricated in OKI's CMOS silicon
gate technology. The MSM5416125A achieves high integration, high-speed operation, and low-
power consumption due to quadruple polysilicon double metal CMOS. The MSM5416125A has
conventional two
CAS
type 256K
¥
16 DRAM compatible pinout. The MSM5416125A is available in
a 40-pin plastic SOJ or 44/40-pin plastic TSOP.
FEATURES
• Fast Page Mode Operation
• Byte wide control: 2
CAS
control
• 131,072-word
¥
16-bit organization
• Pin compatible with 2
CAS
type 256K
¥
16 DRAM
• Single 5 V power supply,
±10%
tolerance
•
CAS
before
RAS
refresh, Hidden refresh,
RAS
only refresh capability
• Refresh: 512 cycles/8 ms
• Package options:
40-pin 400 mil plastic SOJ
(SOJ40-P-400-1.27)
(Product : MSM5416125A-xxJS)
44/40-pin 400 mil plastic TSOP (Type II) (TSOPII44/40-P-400-0.80-K) (Product : MSM5416125A-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
Family
MSM5416125A-40
MSM5416125A-45
MSM5416125A-50
MSM5416125A-60
Access Time (Max.)
t
RAC
t
AA
t
CAC
t
OEA
40 ns 22 ns 14 ns 14 ns
45 ns 24 ns 14 ns 14 ns
50 ns 26 ns 14 ns 14 ns
60 ns 30 ns 15 ns 15 ns
Cycle Time (Min.)
t
RC
80 ns
90 ns
100 ns
120 ns
Power Dissipation
Operating (Max.) Standby (Max.)
770 mW
715 mW
660 mW
605mW
11 mW
1/20
¡ Semiconductor
MSM5416125A
PIN CONFIGURATION (TOP VIEW)
V
CC
1
40 V
SS
DQ0 2
DQ1 3
DQ2 4
DQ3 5
V
CC
6
39 DQ15
38 DQ14
37 DQ13
36 DQ12
35 V
SS
DQ4 7
DQ5 8
DQ6 9
34 DQ11
33 DQ10
32 DQ9
31 DQ8
30 NC
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
21
22
DQ7 10
NC 11
NC 12
29
LCAS
27
OE
26 A8
25 A7
24 A6
23 A5
22 A4
21 V
SS
40-Pin Plastic SOJ
44/40-Pin Plastic TSOP (II)
(K Type)
WE
13
28
UCAS
RAS
14
NC 15
A0 16
A1 17
A2 18
A3 19
V
CC
20
NC
NC
WE
RAS
NC
A0
A1
A2
A3
V
CC
44
43
42
41
40
39
38
37
36
35
32
31
30
29
28
27
26
25
24
23
V
SS
DQ15
DQ14
DQ13
DQ12
V
SS
DQ11
DQ10
DQ9
DQ8
NC
LCAS
UCAS
OE
A8
A7
A6
A5
A4
V
SS
Pin Name
A0 - A8
RAS
LCAS
UCAS
DQ0 - DQ15
WE
OE
V
CC
V
SS
NC
Function
Address Input
Row Address
: A0 - A8
Column Address : A0 - A7
Row Address Strobe
Lower Byte Column Address Strobe
Upper Byte Column Address Strobe
Data - Input / Data - Output
Write Enable
Output Enable
Power Supply (5 V)
Ground (0 V)
No Connection
Note: The same power supply voltage must be provided to every V
CC
pin, and the same GND
voltage level must be provided to every V
SS
pin.
2/20
¡ Semiconductor
MSM5416125A
BLOCK DIAGRAM
OE
RAS
LCAS
UCAS
Burst
Address
Counter
Column
Address
Buffers
Internal
Address
Counter
Row
Address
Buffers
Timing
Generator
WE
I/O
Controller
I/O
Controller
8
Output
Buffers
8
DQ0 - DQ7
8
8
Column Decoders
8
I/O
Selector 16
Input
Buffers
Input
Buffers
8
A0 - A8
Refresh
Control Clock
Sense Amplifiers
16
8
9
9
Row
Deco-
ders
Word
Drivers
Memory
Cells
8
8
DQ8 - DQ15
Output
Buffers
8
V
CC
On-chip
V
BB
Generator
V
SS
FUNCTION TABLE
Input Pin
RAS
H
L
L
L
L
L
L
L
L
LCAS
*
H
L
H
L
L
H
L
L
UCAS
*
H
H
L
L
H
L
L
L
WE
*
*
H
H
H
L
L
L
H
OE
*
*
L
L
L
H
H
H
H
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
Don't Care
D
IN
High-Z
DQ Pin
DQ0 - DQ7
DQ8 - DQ15
High-Z
High-Z
High-Z
D
OUT
D
OUT
Don't Care
D
IN
D
IN
High-Z
Function Mode
Standby
Refresh
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
—
* : "H" or "L"
3/20
¡ Semiconductor
MSM5416125A
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Parameter
Voltage on Any Pin Relative to V
SS
Short Circuit Output Current
Power Dissipation
Operating Temperature
Storage Temperature
Symbol
V
T
I
OS
P
D
T
opr
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Rating
–1.0 to 7.0
50
1
0 to 70
–55 to 150
Unit
V
mA
W
°C
°C
Recommended Operating Conditions
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
4.5
0
2.4
–1.0
Typ.
5.0
0
—
—
Max.
5.5
0
6.5
0.8
(Ta = 0°C to 70°C)
Unit
V
V
V
V
Capacitance
Parameter
Input Capacitance (A0 - A8)
Input Capacitance
(RAS,
LCAS, UCAS, WE, OE)
Output Capacitance (DQ0 - DQ15)
Symbol
C
IN1
C
IN2
C
I/O
Typ.
—
—
—
(V
CC
= 5 V ±10%, Ta = 25°C, f = 1 MHz)
Max.
7
7
10
Unit
pF
pF
pF
4/20
¡ Semiconductor
DC Characteristics
MSM5416125A
(V
CC
= 5 V ±10%, Ta = 0°C to 70°C)
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
V
OH
V
OL
I
LI
Condition
I
OH
= –1.0 mA
I
OL
= 1.0 mA
MSM5416125A MSM5416125A MSM5416125A MSM5416125A
-40
-45
-50
-60
Unit Note
Min. Max. Min. Max. Min. Max. Min. Max.
2.4
0
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
2.4
0
–10
V
CC
0.4
10
V
V
mA
0 V
£
V
I
£
6.5 V ;
All other pins not –10
under test = 0 V
DQi Disable
–10
0 V
£
V
O
£
5.5 V
RAS, CAS
Cycling,
t
RC
= Min.
RAS, CAS
= V
IH
RAS
= Cycling,
CAS
= V
IH
,
t
RC
= Min.
RAS
= V
IH
,
CAS
= V
IL
,
D
out
= Enable
RAS
= Cycling,
CAS
before
RAS
RAS
= V
IL
,
CAS
Cycling,
t
PC
= Min.
—
Output Leakage Current
Average Power
Supply Current
(Operating)
Power Supply
Current (Standby)
Average Power
Supply Current
(RAS Only Refresh)
Power Supply
Current (Standby)
I
LO
10
–10
10
–10
10
–10
10
mA
I
CC1
140
—
130
—
120
—
110
mA 1, 2
I
CC2
—
2
—
2
—
2
—
2
mA
1
I
CC3
—
140
—
130
—
120
—
110
mA 1, 2
I
CC5
—
5
—
5
—
5
—
5
mA
1
Average Power
Supply Current
I
CC6
(CAS before
RAS
Refresh)
Average Power
Supply Current
(Fast Page Mode)
—
140
—
130
—
120
—
110
mA 1, 2
I
CC7
—
130
—
130
—
120
—
110
mA 1, 3
Notes :
1. Specified values are obtained with output open.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
5/20
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