MSC83303
RF & MICROWAVE TRANSISTORS
GENERAL PURPOSE AMPLIFIER APPLICATIONS
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER BALLASTED
VSWR CAPABILITY
∞
:1 @ RATED
CONDITIONS
HERMETIC STRIPAC
®
PACKAGE
P
OUT
=
3.0 W MIN. WITH 7.0 dB GAIN
@ 3.0 GHz
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC83303
BRANDING
83303
PIN CONNECTION
DESCRIPTION
The MSC83303 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory/gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83303 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
ABSOLUTE MAXIMUM RATINGS
(T
case
=
25
°
C)
Symbol
Parameter
Value
Unit
1. Collector
2. Base
3. Emitter
4. Base
P
DISS
I
C
V
CC
T
J
T
STG
Power Dissipation*
Device Current*
(T
C
≤
50°C)
10.0
540
30
200
−
65 to +200
W
mA
V
°
C
°
C
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
R
TH(j-c)
Junction-Case Thermal Resistance*
12
°
C/W
*Applies only to rated RF amplifier operation
September 2, 1994
1/5
MSC83303
ELECTRICAL SPECIFICATIONS
(T
case
=
25
°
C)
STATIC
Symbol
Test Conditions
Value
Min.
Typ.
Max.
Unit
BV
CBO
BV
EBO
BV
CER
I
CBO
h
FE
DYNAMIC
Symbol
I
C
=
1 mA
I
E
=
1 mA
I
C
=
5 mA
V
CB
=
28 V
V
CE
=
5 V
I
E
=
0 mA
I
C
=
0 mA
R
BE
=
10
Ω
I
C
=
200 mA
45
3.5
45
—
30
—
—
—
—
—
—
—
—
0.5
300
V
V
V
mA
—
Test Conditions
Value
Min.
Typ.
Max.
Unit
P
OUT
η
c
P
G
C
OB
f
=
3.0 GHz
f
=
3.0 GHz
f
=
3.0 GHz
f
=
1 MHz
P
IN
=
0.79 W
P
IN
=
0.79 W
P
IN
=
0.79 W
V
CB
=
28 V
V
CC
=
28 V
V
CC
=
28 V
V
CC
=
28 V
2.5
30
5.0
—
2.8
33
5.5
—
—
—
—
5
W
%
dB
pF
TYPICAL PERFORMANCE
TYPICAL POWER OUTPUT
vs FREQUENCY
PERCENT POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
TYPICAL COLLECTOR EFFICIENCY
vs FREQUENCY
2/5
MSC83303
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
FREQ.
1.0 GHz
1.7 GHz
2.0 GHz
2.3 GHz
2.7 GHz
3.0 GHz
Z
IN
(Ω)
4.4 + j 8.7
4.5 + j 14.5
5.1 + j 20.0
7.0 + j 25.0
16.0 + j 33.0
33.0 + j 29.0
Z
CL
(Ω)
13.0 + j 23.0
7.5 + j 12.5
6.0 + j 7.8
4.5 + j 2.2
3.8
−
j 2.0
3.3
−
j 6.0
P
OUT
=
Saturated
V
CC
=
28 V
Normalized to 50 ohms
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
3/5
MSC83303
TEST CIRCUIT
Ref.: Dwg. No. C125562
RF Amplifier Power Output Test
All dimensions are in inches.
Frequency 3.0 GHz
4/5
MSC83303
PACKAGE MECHANICAL DATA
Ref. Dwg. No. 12-0216 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibili ty
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron-
ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
©1994
SGS-THOMSON Microelectronics - All Rights Reserved
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