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MS1402

Description
RF Small Signal Bipolar Transistor, 0.75A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M122, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size86KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MS1402 Overview

RF Small Signal Bipolar Transistor, 0.75A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, PLASTIC, M122, 4 PIN

MS1402 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Objectid2121121013
package instructionPOST/STUD MOUNT, O-PRPM-F4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys ManufacturerMicrosemi Corporation
Samacsys Modified On2020-04-29 15:15:17
Maximum collector current (IC)0.75 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-PRPM-F4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formFLAT
Terminal locationRADIAL
Transistor component materialsSILICON
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MS1402
RF AND MICROWAVE TRANSISTORS
UHF MOBILE APPLICATIONS
Features
450 - 512 MHz
12.5 Volts
Efficiency 55%
P
OUT
= 2.0 W Min.
G
P
= 10.0 dB Gain
DESCRIPTION:
The MS1402 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for UHF communications. This device
utilizes improved metallization to achieve infinite VSWR at rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Device Current
Power Dissipation
Junction Temperature
Storage Temperature
36
16
36
4.0
0.75
5
+200
-65 to +150
V
V
V
V
A
W
°
C
°
C
Thermal Data
R
TH(j-c)
Junction-Case Thermal Resistance
35
°
C/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
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