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U05NU44

Description
0.5 A, 1000 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size134KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

U05NU44 Overview

0.5 A, 1000 V, SILICON, SIGNAL DIODE

U05NU44 Parametric

Parameter NameAttribute value
package instruction3-4D1A, 2 PIN
Contacts2
Manufacturer packaging code3-4D1A
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-C2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current0.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.1 µs
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Base Number Matches1
U05NU44
TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
U05NU44
SWITCHING MODE POWER SUPPLY APPLICATIONS
l
Repetitive Peak Reverse Voltage
l
Average Forward Current
l
Very Fast Reverse-Recovery Time
: V
RRM
= 1000
: I
F (AV)
= 0.5A
: t
rr
= 100ns (Max)
Unit: mm
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Average Forward Current
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
RATING
1000
0.5
10 (50Hz)
−40~150
−40~150
UNIT
V
A
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
3−4D1A
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
Forward Recovry Time
SYMBOL
V
FM
I
RRM
t
rr
t
fr
TEST CONDITION
I
FM
= 0.5A
V
RRM
= 1000V
I
F
= 1A, di / dt =
−30A
/ µs
I
F
= 1.0A
MIN
TYP.
300
MAX
3.0
100
100
UNIT
V
µA
ns
ns
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