PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA835TF
FEATURES
•
LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, V
CE
= 3 V, lc = 3 mA
Q2:NF = 1.2 dB TYP at f = 1 GHz, V
CE
= 3 V, lc = 7 mA
•
HIGH GAIN:
Q1: |S
21E
|
2
= 8.5 dB TYP at f = 1 GHz, V
CE
= 3 V,
lc = 10 mA
Q2: |S
21E
|
2
= 9.0 dB TYP at f = 1 GHz, V
CE
= 3 V,
lc = 7 mA
•
•
6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
2 DIFFERENT BUILT-IN TRANSISTORS
(Q
1
: NE685, Q
2
: NE856)
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06 (Top View)
2.1
±
0.1
1.25
±
0.1
0.65
2.0
±
0.2
1.3
1
6
0.22
- 0.05
(All Leads)
+0.10
2
5
3
4
0.6
±
0.1
0.45
0 ~ 0.1
0.13
±
0.05
DESCRIPTION
The UPA835TF has two different built-in transistors for low cost
amplifier and oscillator applications in the VHF/UHF band. Low
noise figures, high gain, high current capability, and medium
output give this device high dynamic range and excellent
linearity for two-stage amplifiers. This device is also ideally
suited for use in a VCO/buffer amplifier application. The
thinner package style allows for higher density designs.
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
Q2
f
T
Cre
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
pF
dB
dB
7
GHz
pF
dB
dB
µA
µA
100
3.0
4.5
0.7
9
1.2
2.5
1.5
7
UNITS
µA
µA
75
12
0.4
8.5
1.5
2.5
1.0
1.0
145
0.7
MIN
UPA835TF
TS06
TYP
MAX
0.1
0.1
150
Notes: 1. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories
UPA835TF
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
Q1
9
6
2
30
Q2
20
12
3
100
150
150
200
2
150
150
-65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. When operating both devices, the power dissipation for
either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, P
T
(mW)
Free Air
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Total Power Dissipation, P
T
(mW)
Free Air
2 elements in total
200
2 elements in total
200
Q1 when using 1 element
Q2 when using 1 element
Q1 when using
2 elements
100
Q2 when using
2 elements
100
0
50
100
150
0
8
100
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
V
CE
= 3 V
40
20
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 3 V
Collector Current, lc (mA)
30
Collector Current, lc (mA)
10
20
10
0
0.5
1.0
0
0.5
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
UPA835TF
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
Q1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
500
µA
25
Q2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
l
B
=160
µA
140
µA
400
µA
Collector Current, lc (mA)
Collector Current, lc (mA)
50
20
120
µA
15
100
µA
80
µA
10
60
µA
40
µA
5
20
µA
40
300
µA
30
200
µA
20
l
B
=100
µA
10
0
1
2
3
4
5
6
0
5
10
Collector to Emitter Voltage, V
CE
(V)
Collector to Emitter Voltage, V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
V
CE
= 3 V
DC Current Gain, h
FE
5V
V
CE
= 3 V
100
DC Current Gain, h
FE
50 100
100
50
20
0
0.1 0.2
0.5
1
2
5
10
20
10
0.5
1
5
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
14
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
20
f = 2 GHz
5V
Gain Bandwidth Product f
T
(GHz)
12
Gain Bandwidth Product f
T
(GHz)
V
CE
= 3 V
f = 1.0 GHz
10
10
3V
8
5
V
CE
= 1 V
6
2
4
2
0.5
1
2
5
10
20
50
1
0.5
1
5
10
50
Collector Current, lc (mA)
Collector Current, lc (mA)
UPA835TF
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
Q1
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
10
15
Q2
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain, |S
21E
|
2
(dB)
V
CE
= 3 V
f = 1.0 GHz
Insertion Power Gain, |S
21E
|
2
(dB)
f = 2 GHz
5V
8
3V
10
6
V
CE
= 1 V
5
4
2
0.5
2
5
10
20
50
0
0.5
1
5
10
50
100
Collector Current, lc (mA)
Collector Current, lc (mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
4
V
CE
= 3 V
f = 2 GHz
6
NOISE FIGURE vs.
COLLECTOR CURRENT
V
CE
= 3 V
f = 1 GHz
Noise Figure, NF (dB)
3
Noise Figure, NF (dB)
4
2
2
1
0
0.5
1
2
5
10
20
50
0
0.5
1.0
5.0
10
50
100
Collector Current, lc (mA)
Collector Current, lc (mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
0.6
f = 1 MHz
5.0
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
f = 1 MHz
Feedback Capacitance, Cre (pF)
0.5
Feedback Capacitance, Cre (pF)
2.0
1.0
0.4
0.5
0.3
0.2
0.2
0.5
1
2
5
10
20
0.1
1
2
5
10
20
50
Collector to Base Voltage, V
CB
(V)
Collector to Base Voltage, V
CB
(V)
UPA835TF
TYPICAL PERFORMANCE CURVES
(T
A
= 25˚C)
Q2
INSERTION POWER GAIN vs.
FREQUENCY
24
Insertion Power Gain, |S
21E
|
2
(dB)
V
CE
= 3 V
lc = 7 mA
20
16
12
8
4
0
0.1
0.2
0.5
1.0
2.0
5.0
Frequency, f (GHz)
TYPICAL SCATTERING PARAMETERS
Q1
V
CE
= 3 V, I
C
= 1 mA, Z
0
= 50
Ω
FREQUENCY
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
MAG
0.98
0.97
0.95
0.93
0.90
0.87
0.84
0.80
0.76
0.73
0.64
0.51
0.43
0.35
0.31
0.35
S
11
ANG
-5.93
-11.90
-18.17
-24.00
-30.10
-36.17
-42.49
-48.69
-55.28
-61.26
-74.79
-96.77
-112.09
-138.38
175.03
140.64
MAG
2.38
2.36
2.39
2.35
2.35
2.33
2.30
2.29
2.29
2.24
2.19
2.10
2.00
1.84
1.62
1.41
S
21
ANG
172.32
165.08
158.35
151.83
145.70
140.22
134.45
129.32
123.53
118.31
108.30
93.80
84.74
72.75
54.64
40.02
MAG
0.02
0.04
0.06
0.07
0.09
0.10
0.12
0.13
0.14
0.15
0.16
0.18
0.19
0.19
0.20
0.21
S
12
ANG
85.76
81.15
76.27
72.22
68.30
64.18
60.68
56.90
53.94
51.07
45.85
39.24
36.24
32.40
29.55
28.96
MAG
1.00
0.99
0.97
0.96
0.94
0.92
0.89
0.87
0.84
0.81
0.76
0.69
0.65
0.60
0.53
0.47
S
22
ANG
-3.86
-7.44
-11.14
-14.73
-18.02
-21.42
-24.18
-27.47
-29.94
-32.50
-36.89
-42.90
-46.39
-51.51
-59.91
-69.74
Q2
V
CE
= 3 V, I
C
= 1 mA, Z
0
= 50
Ω
FREQUENCY
(GHz)
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.50
1.70
2.00
2.50
3.00
MAG
0.97
0.93
0.89
0.84
0.80
0.76
0.74
0.71
0.69
0.68
0.67
0.67
0.68
0.69
0.72
0.75
S
11
ANG
-20.79
-40.50
-59.73
-76.87
-93.28
-107.72
-120.25
-131.32
-141.35
-150.05
-165.04
176.90
166.97
154.69
137.73
124.46
MAG
2.52
2.43
2.35
2.20
2.11
1.99
1.85
1.74
1.64
1.53
1.36
1.17
1.06
0.94
0.79
0.68
S
21
ANG
162.21
147.42
134.45
123.37
113.14
104.15
96.02
88.78
82.34
76.48
66.07
52.95
45.23
35.40
21.71
11.96
MAG
0.04
0.08
0.11
0.13
0.14
0.15
0.16
0.15
0.15
0.15
0.14
0.13
0.13
0.14
0.21
0.30
S
12
ANG
76.22
63.75
53.38
44.64
38.01
32.06
27.52
24.29
21.95
20.46
19.44
24.64
32.01
44.56
55.71
51.65
MAG
0.98
0.93
0.87
0.81
0.76
0.71
0.68
0.65
0.62
0.60
0.57
0.53
0.51
0.48
0.45
0.46
S
22
ANG
-8.81
-16.39
-22.34
-27.24
-30.90
-34.29
-36.96
-39.46
-41.97
-44.52
-50.06
-59.83
-68.26
-82.95
-114.70
-152.23
京公网安备 11010802033920号
EEWORLD
