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UPA835TF-T1

Description
NPN SILICON EPITAXIAL TWIN TRANSISTOR
File Size56KB,10 Pages
ManufacturerNEC ( Renesas )
Websitehttps://www2.renesas.cn/zh-cn/
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UPA835TF-T1 Overview

NPN SILICON EPITAXIAL TWIN TRANSISTOR

PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TWIN TRANSISTOR
UPA835TF
FEATURES
LOW NOISE:
Q1:NF = 1.5 dB TYP at f = 2 GHz, V
CE
= 3 V, lc = 3 mA
Q2:NF = 1.2 dB TYP at f = 1 GHz, V
CE
= 3 V, lc = 7 mA
HIGH GAIN:
Q1: |S
21E
|
2
= 8.5 dB TYP at f = 1 GHz, V
CE
= 3 V,
lc = 10 mA
Q2: |S
21E
|
2
= 9.0 dB TYP at f = 1 GHz, V
CE
= 3 V,
lc = 7 mA
6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
2 DIFFERENT BUILT-IN TRANSISTORS
(Q
1
: NE685, Q
2
: NE856)
OUTLINE DIMENSIONS
(Units in mm)
Package Outline TS06 (Top View)
2.1
±
0.1
1.25
±
0.1
0.65
2.0
±
0.2
1.3
1
6
0.22
- 0.05
(All Leads)
+0.10
2
5
3
4
0.6
±
0.1
0.45
0 ~ 0.1
0.13
±
0.05
DESCRIPTION
The UPA835TF has two different built-in transistors for low cost
amplifier and oscillator applications in the VHF/UHF band. Low
noise figures, high gain, high current capability, and medium
output give this device high dynamic range and excellent
linearity for two-stage amplifiers. This device is also ideally
suited for use in a VCO/buffer amplifier application. The
thinner package style allows for higher density designs.
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Note:
Pin 1 is the lower left most pin as
the package lettering is oriented
and read left to right.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
h
FE
Q1
f
T
Cre
|S
21E
|
2
NF
I
CBO
I
EBO
h
FE
Q2
f
T
Cre
|S
21E
|
2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CB
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 10 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=10 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
DC Current Gain
1
at V
CE
= 3 V, I
C
= 7 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
Feedback Capacitance
2
at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
=7 mA, f = 1 GHz
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
pF
dB
dB
7
GHz
pF
dB
dB
µA
µA
100
3.0
4.5
0.7
9
1.2
2.5
1.5
7
UNITS
µA
µA
75
12
0.4
8.5
1.5
2.5
1.0
1.0
145
0.7
MIN
UPA835TF
TS06
TYP
MAX
0.1
0.1
150
Notes: 1. Pulsed measurement, pulse width
350
µs,
duty cycle
2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with
emitter connected to guard pin of capacitances meter.
California Eastern Laboratories

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