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FZT657

Description
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size93KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Environmental Compliance
Download Datasheet Parametric View All

FZT657 Overview

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

FZT657 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerZetex Semiconductors
package instructionSOT-223, 4 PIN
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.5 A
Collector-based maximum capacity20 pF
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.5 V
FZT657
ISSUE 3– FEBRUARY 1995
FEATURES
* Low saturation voltage
C
COMPLEMENTARY TYPE - FZT757
E
V
CE
=5V
SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT657
TYPICAL CHARACTERISTICS
1.8
1.6
100
1.4
80
1.2
PARTMARKING DETAIL - FZT657
B
C
- (Volts)
1.0
I
C
/I
B
=10
60
0.8
0.6
40
V
0.4
0.2
h
0
0.01
0.1
1
10
- Normalised Gain (%)
20
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
V
CE
=5V
0.01
0.1
1
10
0
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
SYMBOL MIN.
TYP.
MAX.
VALUE
300
300
5
1
0.5
2
-55 to +150
UNIT
CONDITIONS.
UNIT
V
V
V
A
A
W
°C
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
1.2
1.2
I
C
/I
B
=10
Operating and Storage Temperature Range
PARAMETER
- (Volts)
0.8
- (Volts)
1.0
1.0
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Collector-Base
Breakdown Voltage
0.01
0.1
1
10
0.8
V
V
V
(BR)CBO
V
(BR)CEO
300
300
5
I
CBO
0.1
V
V
V
µ
A
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=200V
0.6
0.6
0.4
0.01
0.1
1
10
0.4
Collector-Emitter
Breakdown Voltage
I
+
-
Collector Current (Amps)
I
+
-
Collector Current (Amps)
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
V
BE(sat)
v I
C
V
BE(on)
v I
C
1
I
B1
=I
B2
=I
C
/10
V
CE
=10V
ts
ts
3
µs
Single Pulse T
est at T
amb
=25°C
td
I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
0.1
0.5
1.0
1.0
µ
A
V
EB
=3V
V
V
V
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
I
C
=100mA, V
CE
=5V*
tr
tf
µs
0.1
1.4
1.2
1.0
0.8
tf
2
0.01
td
tr
0.6
1
Switching time
DC
100ms
10ms
1ms
300
µ
s
0.4
0.2
Static Forward Current
Transfer Ratio
0
1
h
FE
Transition Frequency
Output Capacitance
f
T
C
obo
40
50
30
20
MHz
pF
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 213
0.001
0.1
0
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
1
10
100
1000
0.01
V
CE
- Collector Emitter Voltage (V)
I
+
-
Collector Current (Amps)
Safe Operating Area
Switching Speeds
3 - 214
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