VUC 25
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
I
dAVM
= 28 A
I
TAVM
= 26 A
V
RRM
= 1200-1600 V
3
5
6
4
7
8
V
RSM
V
DSM
V
1300
1500
1700
V
RRM
V
DRM
V
1200
1400
1600
Type
2
1
6
7
5
4
1
2
VUC 25-12go2
VUC 25-14go2
VUC 25-16go2
3
8
Symbol
I
dAV
I
dAVM
I
TAVM
I
FSM
, I
TSM
Conditions
T
K
= 85°C; module
module
T
K
= 85°C; (DC)
T
VJ
= 45°C;
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
-o
300
330
270
300
330
370
300
330
545
575
450
460
150
450
460
365
380
500
200
10
≤
≤
10
1
0.5
-40...+125
125
-40...+125
3000
3600
2-2.5
18-22
28
25
28
-
u
-
-
26
A
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/μs
A/μs
V/μs
V
W
W
W
°C
°C
°C
V~
V~
Nm
lb.in.
g
Maximum Ratings
Diode Thyristor
I
2
t
(di/dt)
cr
p
T
VJ
= T
VJM
repetitive, I
T
= 50 A
f =400 Hz, t
P
=200
μs
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= I
TAVM
di
G
/dt = 0.3 A/μs
h
a
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
s
T
VJ
= 45°C
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
e
(dv/dt)
cr
V
RGM
P
GM
P
GAVM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
I
T
= I
TAVM
t
p
= 30
μs
t
p
= 10 ms
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
typ.
t = 1 min
t=1s
(M5)
(10-32 UNF)
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
20091201a
© 2009 IXYS All rights reserved
t
Features
•
Package with DCB ceramic base plate
•
Isolation voltage 3600 V~
•
Planar passivated chips
•
Fast recovery diodes to reduce EMI
•
Separate thyristor for softstart
•
Solderable terminals
•
UL registered E 72873
Applications
•
Input rectifier for switching power
supplies (SMPS)
•
Softstart capacitor charging
•
Electric drives and auxiliaries
Advantages
•
Easy to mount with two screws
•
Space and weight savings
•
Improved temperature & power cycling
•
Up to 10 dB lower EMI/RFI
compared to standard rectifier
Dimensions in mm (1 mm = 0.0394")
1-2
VUC 25
Symbol
I
R
, I
D
V
F
, V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
t
rr
R
thJC
R
thJH
d
S
d
A
a
Conditions
V
R
= V
RRM
; V
D
= V
DRM
T
VJ
= T
VJM
T
VJ
= 25°C
Characteristic Values
Diode Thyristor
≤
5
≤
0.3
≤
2.2
1.2
18
≤
≤
≤
≤
≤
≤
≤
≤
≤
≤
5
0.3
1.5
mA
mA
V
I
F
= 55 A; I
T
= 45 A, T
VJ
= 25°C
For power-loss calculations only
(T
VJ
= 125°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
= T
VJM
;
T
VJ
= 25°C
T
VJ
= 25°C
V
D
= 2/3 V
DRM
V
D
= 2/3 V
DRM
1.1
V
11 mΩ
1.5
80
0.2
5
300
100
2.5
V
mA
V
mA
mA
mA
μs
T
VJ
= 25°C; t
G
= 30
μs
I
G
= 0.3 A; di
G
/dt = 0.3 A/μs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= 1/2 V
DRM
I
G
= 0.3 A; di
G
/dt = 0.3 A/μs
T
VJ
= 125°C; I
T
= 15 A, t
p
= 300
μs,
-di/dt = 10 A/μs
V
R
= 100 V, dv/dt = 20 V/μs, V
D
= 2/3 V
DRM
T
VJ
= 25°C; I
F
= 10 A;
-di/dt = 10 A/μs, V
R
= 1/2 V
RRM
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
≤
1.5
2.3
0.38
2.9
0.48
typ. 130
-
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
a
s
e
-o
u
0.9
-
1.1
-
K/W
K/W
K/W
K/W
7 mm
7 mm
50 m/s
2
t
μs
μs
20091201a
© 2009 IXYS All rights reserved
2-2
stm32/stm8
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