MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF448/D
NPN Silicon
RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
•
Intermodulation Distortion @ 250 W (PEP) —
IMD = – 30 dB (Max)
•
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MRF448
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Value
50
100
4.0
16
20
290
1.67
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
50
100
100
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Vdc
(continued)
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF448
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 10 Vdc)
hFE
10
30
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
350
450
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz, ICQ = 250 mA)
Collector Efficiency
(VCC = 50 Vdc, Pout = 250 W, f = 30 MHz, ICQ = 250 mA)
Intermodulation Distortion (2)
(VCE = 50 Vdc, Pout = 250 W (PEP), ICQ = 250 mA, f = 30 MHz)
Electrical Ruggedness
(VCC = 50 Vdc, Pout = 250 W CW, f = 30 MHz,
VSWR 3:1 at all Phase Angles)
GPE
η
IMD
ψ
No Degradation in Output Power
12
—
—
—
14
45
65
– 33
—
—
—
– 30
dB
% (PEP)
% (CW)
dB
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
+
BIAS
C3
C4
+
–
L3
L2
D.U.T.
RF
INPUT
C1
L1
C2
R2
C5
L4
CR1
C8
L5
L6
+
C9
+
–
–
RF
OUTPUT
C10
50 Vdc
C7
C6
C1, C2, C5, C7 — 170– 780 pF, Arco 469
C3, C8, C9 — 0.1
µF,
100 V Erie
C4 — 500
µF
@ 6.0 V
C6 — 360 pF, 3 x 120 pF 3.0 kV in parallel
C10 — 10
µF,
100 V
R1 — 10
Ω,
10 Watt
R2 — 10
Ω,
1.0 Watt
CR1 — 1N4997 or equivalent
L1 — 3 Turns, #16 Wire, 0.4″ I.D., 0.3″ Long
L2 — 0.8
µH,
Ohmite Z–235 or equivalent
L3 — 12 Turns, #16 Enameled Wire Closewound 0.25″ I.D.
L4 — 4 Turns, 1/8″ Copper Tubing, 0.6″ I.D., 1.0″ Long
L5, L6 — 2.0
µH,
Fair–Rite 2643021801 Ferrite bead each or equivalent
Figure 1. 30 MHz Test Circuit Schematic
MRF448
2
MOTOROLA RF DEVICE DATA
400
Pout , OUTPUT POWER (WATTS PEP)
Pout , OUTPUT POWER (WATTS CW)
f = 30 MHz
ICQ = 250 mA
400
f = 30, 30.001 MHz
ICQ = 250 mA
IMD = d3
IMD = – 30 dB
300
VCC = 50 V
40 V
300
200
200
– 35 dB
100
100
0
0
4
8
12
Pin, INPUT POWER (WATTS)
16
20
0
20
30
40
50
VCC, SUPPLY VOLTAGE (VOLTS)
60
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
25
Pout , OUTPUT POWER (WATTS CW)
400
f = 30 MHz
ICQ = 250 mA
VCC = 50 V
20
G PE , POWER GAIN (dB)
350
15
300
TC = 50°C
10
5
0
2
4
7
10
f, FREQUENCY (MHz)
VCC = 50 V
ICQ = 250 mA
Pout = 250 W
250
200
100°C
15
30
150
1
3
5
10
30 50
OUTPUT VSWR
Figure 4. Power Gain versus Frequency
Figure 5. RF SOAR (Class AB)
Pout versus Output VSWR
VCC = 30 V
200
15 V
f T (MHz)
150
IMD, INTERMODULATION DISTORTION (dB)
250
– 25
VCC = 50 V
f = 30, 30.001 MHz
d3
– 30
– 35
d5
100
– 40
50
– 45
0
0
10
15
5
IC, COLLECTOR CURRENT (AMPS)
20
– 50
25
75
125
175
225
275
Pout, OUTPUT POWER (WATTS PEP)
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
MOTOROLA RF DEVICE DATA
MRF448
3
20
Rout , PARALLEL EQUIVALENT OUTPUT
RESISTANCE (OHMS)
CP
16
VCC = 50 V
ICQ = 250 mA
Pout = 250 W PEP
5000
Cout , PARALLEL EQUIVALENT OUTPUT
CAPACITANCE (pF)
Zin
Ohms
4.50 – j1.40
3.10 – j1.80
1.70 – j1.75
0.80 – j1.25
0.60 – j0.75
4000
12
RP
8
3000
2000
4
1000
0
1.5
2
4
7
10
f, FREQUENCY (MHz)
15
20
0
30
Figure 8. Output Resistance and Capacitance
versus Frequency
30
15
7.0
4.0
f = 2.0 MHz
Zo = 10
Ω
VCC = 50 V
ICQ = 150 mA
Pout = 250 W PEP
f
MHz
2.0
4.0
7.0
15
30
Figure 9. Series Equivalent Impedance
MRF448
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
U
M
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D
K
J
H
C
E
SEATING
PLANE
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45
_
NOM
0.115
0.130
0.246
0.255
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45
_
NOM
2.93
3.30
6.25
6.47
18.29
18.54
EMITTER
BASE
EMITTER
COLLECTOR
CASE 211–11
ISSUE N
MOTOROLA RF DEVICE DATA
MRF448
5
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