MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
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by MRF429/D
NPN Silicon
RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•
Specified 50 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 13 dB
Efficiency = 45%
•
Intermodulation Distortion @ 150 W (PEP) —
IMD = – 32 dB (Max)
•
Diffused Emitter Resistors for Superior Ruggedness
•
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
@ 150 W CW
MRF429
150 W (LINEAR), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
—
PD
Tstg
Value
50
100
4.0
16
20
233
1.33
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.75
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
50
100
100
4.0
—
—
—
—
—
—
—
—
Vdc
Vdc
Vdc
Vdc
(continued)
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF429
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
30
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
220
300
pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Gain
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30; 30.001 MHz)
Output Power
(VCE = 50 Vdc, f = 30; 30.001 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc,
f = 30, 30.001 MHz)
Intermodulation Distortion (1)
(VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc)
Electrical Ruggedness
(VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz,
VSWR 30:1 at all Phase Angles)
GPE
13
15
—
dB
Pout
η
150
45
—
—
—
—
W (PEP)
%
IMD
ψ
—
– 35
– 32
dB
No Degradation in Output Power
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
R1
+
BIAS
–
+
C3
C4
–
L2
DUT
RF
INPUT
C2
L1
L3
L4
CR1
C8
L5
+
C9
C10
50 Vdc
–
RF
OUTPUT
C6
R3
C1
R2
C5
C7
C1, C2, C7 — 170 – 780 pF, Arco 469
C3, C8, C9 — 0.1
µF,
100 V Erie
C4 — 500
µF
@ 6.0 V
C5 — 9.0 – 180 pF, Arco 463
C6 — 80 – 480 pF, Arco 466
C10 — 30
µF,
100 V
R1 — 10
Ω,
10 Watt
R2 — 10
Ω,
1.0 Watt
R3 — 5.0 – 3.3
Ω
1/2 Watt Carbon Resistors in Parallel
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10
µH
Molded Choke
L3 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
L4 — 5 Turns, 1/8″ Copper Tubing, 9/16″ I.D., 3/4″ Long
L5 — 10 Ferrite Beads — Ferroxcube #56–590–65/3B
Figure 1. 30 MHz Test Circuit Schematic
MRF429
2
MOTOROLA RF DEVICE DATA
250
VCC = 50 V
40 V
150
28 V
100
Pout , OUTPUT POWER (WATTS PEP)
Pout , OUTPUT POWER (WATTS CW)
f = 30 MHz
ICQ = 150 mA
250
f = 30, 30.001 MHz
ICQ = 150 mA
IMD = d3
200
200
IMD = – 30 dB
150
– 35 dB
100
50
50
0
0
2
4
6
Pin, INPUT POWER (WATTS)
8
10
0
20
30
40
50
VCC, SUPPLY VOLTAGE (VOLTS)
60
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Supply Voltage
30
350
f = 30.000 MHz
ICQ = 150 mA
VCC = 50 V
G PE , POWER GAIN (dB)
25
Pout , (WATTS CW)
300
20
250
15
10
0
1
2
4
VCC = 50 V
ICQ = 150 mA
Pout = 150 W
200
TC = 50°C
150
100°C
7
15
f, FREQUENCY (MHz)
30
60
100
100
1
3
5
10
30 50
OUTPUT VSWR
Figure 4. Power Gain versus Frequency
Figure 5. RF Safe Operating Area (SOAR)
VCC = 30 V
200
15 V
f T (MHz)
150
IMD, INTERMODULATION DISTORTION (dB)
250
– 25
– 30
d3
d5
VCC = 50 V
f = 30, 30.001 MHz
– 35
100
– 40
50
– 45
0
0
10
5
IC, COLLECTOR CURRENT (AMPS)
14
– 50
0
20
40
60
80
100
120
Pout, OUTPUT POWER (WATTS PEP)
140
160
Figure 6. fT versus Collector Current
Figure 7. IMD versus Pout
MOTOROLA RF DEVICE DATA
MRF429
3
5000
Cout , PARALLEL EQUIVALENT OUTPUT
CAPACITANCE (pF)
Rout , PARALLEL EQUIVALENT OUTPUT
RESISTANCE (OHMS)
VCC = 50 V
ICQ = 150 mA
Pout = 150 W PEP
20
VCC = 50 V
ICQ = 150 mA
Pout = 150 W PEP
4000
16
3000
12
2000
8
1000
0
1
2
4
7
15
f, FREQUENCY (MHz)
30
60
100
4
0
1
2
4
7
15
f, FREQUENCY (MHz)
30
60
100
Figure 8. Output Capacitance versus Frequency
Figure 9. Output Resistance versus Frequency
90
60
30
15
VCC = 50 V
ICQ = 150 mA
Pout = 150 W PEP
f
MHz
2.0
4.0
7.0
15
30
60
90
Zin
Ohms
7.15 – j2.40
4.20 – j2.25
2.55 – j1.75
1.60 – j1.15
1.10 – j0.70
0.78 – j0.30
0.67 – j0.10
7.0
4.0
f = 2.0 MHz
Zo = 10
Ω
Figure 10. Series Equivalent Impedance
MRF429
4
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
A
U
M
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D
K
J
H
C
E
SEATING
PLANE
DIM
A
B
C
D
E
H
J
K
M
Q
R
U
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.960
0.990
0.465
0.510
0.229
0.275
0.216
0.235
0.084
0.110
0.144
0.178
0.003
0.007
0.435
–––
45
_
NOM
0.115
0.130
0.246
0.255
0.720
0.730
MILLIMETERS
MIN
MAX
24.39
25.14
11.82
12.95
5.82
6.98
5.49
5.96
2.14
2.79
3.66
4.52
0.08
0.17
11.05
–––
45
_
NOM
2.93
3.30
6.25
6.47
18.29
18.54
EMITTER
BASE
EMITTER
COLLECTOR
CASE 211–11
ISSUE N
MOTOROLA RF DEVICE DATA
MRF429
5
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