This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance.
The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
•
–5.3 A, –30V R
DS(ON)
= 59 mΩ @ V
GS
= –10 V
R
DS(ON)
= 92 mΩ @ V
GS
= –4.5 V
•
V
F
< 0.35 V @ 1 A (T
J
= 125°C)
V
F
< 0.25 V @ 1 A (T
J
= 25°C)
•
Schottky and MOSFET incorporated into single
power surface mount SO-8 package
•
Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
C
C
A
1
A
2
G
S
A
8
C
7
C
6
D
5
D
S
3
G
4
SO-8
Pin 1
A
T
A
=25
o
C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Parameter
(Note 1a)
Ratings
–
30
±
25
–
5.3
–
20
2
1.6
1
0.9
Units
V
V
A
W
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
V
RRM
I
O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
–
55 to +150
30
1
°C
V
A
Package Marking and Ordering Information
Device Marking
FDFS2P103A
Device
FDFS2P103A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
2002
Fairchild Semiconductor Corporation
FDFS2P103A Rev C (W)
FDFS2P103A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
Test Conditions
I
D
= –250
µA
V
GS
= 0 V,
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –24 V, V
GS
= 0 V
V
GS
= ±25 V,
V
DS
= 0 V
Min
–30
Typ
Max
Units
V
Off Characteristics
–22
–1
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
I
D
= –250
µA
V
DS
= V
GS
,
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –10 V, I
D
= –5.3 A
V
GS
= –4.5 V, I
D
= –4 A
V
GS
=–10 V, I
D
= –5.3A, T
J
=125°C
V
DS
= –5V,
I
D
= –5.3 A
–1
–1.8
4.2
50
76
68
8.9
–3
V
mV/°C
59
92
88
mΩ
g
FS
S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= –15 V,
f = 1.0 MHz
V
GS
= 0 V,
V
GS
= 0 V,
535
135
75
4.7
pF
pF
pF
Ω
f = 1.0 MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
Ω
11
16
15
10
5.7
1.8
2.4
21
28
26
19
8
ns
ns
ns
ns
nC
nC
nC
V
DS
= –15 V,
V
GS
= –5 V
I
D
= –5.3 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= –1.3 A
Voltage
Reverse Leakage
V
R
= 30 V
I
F
= 0.1A
V
F
Forward Voltage
I
F
= 1A
I
F
= 3A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
(Note 2)
–0.8
–1.3
–1.2
A
V
Schottky Diode Characteristics
I
R
160
225
80
305
185
380
500
280
250
350
250
420
µA
mV
mV
mV
mV
mV
FDFS2P103A Rev C (W)
FDFS2P103A
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
78
135
40
°C/W
°C/W
°C/W
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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