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BCW61AT/R

Description
TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size70KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BCW61AT/R Overview

TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

BCW61AT/R Parametric

Parameter NameAttribute value
MakerNXP
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
VCEsat-Max0.55 V
Base Number Matches1

BCW61AT/R Related Products

BCW61AT/R BCW61A
Description TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal TRANSISTOR,BJT,PNP,32V V(BR)CEO,100MA I(C),TO-236AA
Maker NXP NXP
Reach Compliance Code compliant unknown
Maximum collector current (IC) 0.1 A 0.1 A
Configuration SINGLE Single
Minimum DC current gain (hFE) 60 120
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Base Number Matches 1 1

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