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BCW61A

Description
TRANSISTOR,BJT,PNP,32V V(BR)CEO,100MA I(C),TO-236AA
CategoryDiscrete semiconductor    The transistor   
File Size70KB,3 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BCW61A Overview

TRANSISTOR,BJT,PNP,32V V(BR)CEO,100MA I(C),TO-236AA

BCW61A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)120
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BCW61A Related Products

BCW61A BCW61AT/R
Description TRANSISTOR,BJT,PNP,32V V(BR)CEO,100MA I(C),TO-236AA TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
Maker NXP NXP
Reach Compliance Code unknown compliant
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single SINGLE
Minimum DC current gain (hFE) 120 60
Maximum operating temperature 150 °C 150 °C
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Base Number Matches 1 1
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