epitex
Opto-Device & Custom LED
Φ5
STEM TYPE LED LAMP L850-40K42
L850-40K42
♦Features
1) High radiated intensity
2) High Reliability
♦Specifications
1) Product Name
2) Type No.
3) Chip Spec.
(1) Material
(2) Peak Wavelength
4) Package
(1) Type
(2) Lens
(3) Cap
stem type LED with high beam
L850-40K42 is an AlGaAs LED mounted on TO-46 stem with unspherical glass ball lens,
being designed for high beam uses.
On forward bias it emits a spectral band of radiation, which peaks at 870nm.
♦Outer
dimension（Unit:mm）
Infrared LED Lamp
L850-40K42
AlGaAs
850nm
TO-46 stem
Unspherical glass lens
Gold plated
♦Absolute
Maximum Ratings
Item
Symbol
Maximum Rated Value
Unit
Ambient Temperature
Power Dissipation
P
D
160
mW
Ta=25°C
Forward Current
I
F
100
mA
Ta=25°C
Pulse Forward Current
I
FP
1000
mA
Ta=25°C
Reverse Voltage
V
R
5
V
Ta=25°C
Operating Temperature
T
OPR
-30 ~ +80
°C
-30 ~ +100
°C
Storage Temperature
T
STG
Soldering Temperature
T
SOL
260
°C
‡
Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡
Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
♦Electro-Optical
Characteristics
Item
Symbol Condition
Minimum
Forward Voltage
V
F
I
F
=50mA
Reverse Current
I
R
V
R
=5V
Total Radiated Power
P
O
I
F
=50mA
8
Radiant Intensity
I
E
I
F
=50mA
835
Peak Wavelength
I
F
=50mA
λ
P
Half Width
I
F
=50mA
∆λ
Viewing Half Angle
I
F
=50mA
θ
1/2
Rise Time
I
F
=50mA
½½
Fall Time
I
F
=50mA
½½
‡
Total Radiated Power is measured by Photodyne #500
‡
Radiant Intensity is measured by Tektronix J-6512.
Typical
1.55
13
80
850
40
±6
25
15
Maximum
1.70
10
865
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
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