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IRFH7885TRPBF

Description
MOSFET TRENCH_MOSFETS
Categorysemiconductor    Discrete semiconductor   
File Size497KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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MOSFET TRENCH_MOSFETS

IRFH7885TRPBF Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Package / CasePQFN-8
PackagingCut Tape
PackagingReel
Height0.83 mm
Length6 mm
Factory Pack Quantity4000
Width5 mm
FastIRFET™
IRFH7885PbF
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
(@ V
GS
= 10V)
Q
g (typical)
R
g (typical)
(@T
C (Bottom)
= 25°C)
I
D
80
3.9
36
1.2
146
V
m
nC

A
 
PQFN 5X6 mm
 
Applications

Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies

Secondary Side Synchronous Rectifier

BLDC Motor Drive
Features
Low R
DS(ON)
(< 3.9m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility

Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
 
IRFH7885PbF
Package Type
 
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7885TRPbF
 
 
Units
V
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
C(Bottom)
= 25°C
I
D
@ T
C(Bottom)
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C(Bottom)
= 25°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
22
146
93
250
3.6
156
0.03
A
W
W/°C
°C
-55 to + 150
Notes
through
are on page 8
1
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© 2015 International Rectifier
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